We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. Transmission performance over 10 km was investigated under 25 Gbps and 43 Gbps modulation. In addition, the feasibility of wide temperature range operation was also investigated. An uncooled EA/DFB laser can contribute to the realization of low-power-consumption, small-footprint and cost-effective transceiver module. In this study, we used the temperature-tolerant InGaAlAs materials in an EA modulator. A wide temperature ranged 12 km transmission with over 9.6 dB dynamic extinction ratio was demonstrated under 25 Gbps modulation. A 43 Gbps 10 km transmission was also demonstrated. The laser achieved a clear, opened eye diagram with a dynamic extinction ratio over 7 dB from 25 to 85. The modulated output power was more than +2.9 dBm even at 85. These devices are suitable for next-generation, high-speed network systems, such as 40 Gbps and 100 Gbps Ethernet.

A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80 varies from 60 to 130 K and decreased with decreasing cavity length for shorter cavity (< 400 µm) devices. On the other hand, longer cavity (< 400 µm) devices show that the cavity length does not affect so much to T0. The internal losses did not increase with increasing temperature. On the other hand, internal quantum efficiencies decreased with increasing temperature. It is considered that non-radiative recombination center with large temperature dependence may influence the decrease of the internal quantum efficiency due to the insufficient crystal quality of GaInNAs layer. The transparency current densities were unchanged for all temperature range, however, the gain constants decreased with increasing temperature. Thus, the decrease of the gain constant is considered to be due to decreasing of gain. Unchanged both transparency current density and internal loss may also express that these temperature characteristics were not induced by carrier overflow but be done by decreasing of the gain. From the results, it is considered that the temperature dependence of the gain originated from the Fermi-Dirac distribution of carriers was dominant for the temperature characteristics of GaInNAs/GaAs lasers. Due to the temperature dependence on the gain, the T0 decreases with increasing mirror loss.