IEICE TRANSACTIONS on Electronics
Designs of Building Blocks for High-Speed, Low-Power Processors
Summary :
A fast, low-power 16-bit adder, 32-word register file and 512-bit cache SRAM have been developed using 0.25-µm GaAs HEMT technology for future multi-GHz processors. The 16-bit adder, which uses a negative logic binary look-ahead carry structure based on NOR gates, operates at the maximum clock frequency of 1.67 GHz and consumes 134.4 mW at a supply voltage of 0.6 V. The active area is 1.6 mm2 and there are about 1,230 FETs. A new DC/DC level converter has been developed for use in high-speed, low-power storage circuits such as SRAMs and register files. The level converter can increase the DC voltage, which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. The power dissipation (P) of the 32-word register file with on-chip DC/DC level converters is 459 mW, a reduction to 25.2% of that of an equivalent conventional register file, while the operating frequency (fc) was 5.17 GHz that is 74.8% of fc for the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters is 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.2 pp.331-338
- Publication Date
- 2002/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on High-Performance and Low-Power Microprocessors)
- Category
- High-Performance Technologies
Authors
Keyword
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Tadayoshi ENOMOTO, "Designs of Building Blocks for High-Speed, Low-Power Processors" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 2, pp. 331-338, February 2002, doi: .
Abstract: A fast, low-power 16-bit adder, 32-word register file and 512-bit cache SRAM have been developed using 0.25-µm GaAs HEMT technology for future multi-GHz processors. The 16-bit adder, which uses a negative logic binary look-ahead carry structure based on NOR gates, operates at the maximum clock frequency of 1.67 GHz and consumes 134.4 mW at a supply voltage of 0.6 V. The active area is 1.6 mm2 and there are about 1,230 FETs. A new DC/DC level converter has been developed for use in high-speed, low-power storage circuits such as SRAMs and register files. The level converter can increase the DC voltage, which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. The power dissipation (P) of the 32-word register file with on-chip DC/DC level converters is 459 mW, a reduction to 25.2% of that of an equivalent conventional register file, while the operating frequency (fc) was 5.17 GHz that is 74.8% of fc for the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters is 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_2_331/_p
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@ARTICLE{e85-c_2_331,
author={Tadayoshi ENOMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Designs of Building Blocks for High-Speed, Low-Power Processors},
year={2002},
volume={E85-C},
number={2},
pages={331-338},
abstract={A fast, low-power 16-bit adder, 32-word register file and 512-bit cache SRAM have been developed using 0.25-µm GaAs HEMT technology for future multi-GHz processors. The 16-bit adder, which uses a negative logic binary look-ahead carry structure based on NOR gates, operates at the maximum clock frequency of 1.67 GHz and consumes 134.4 mW at a supply voltage of 0.6 V. The active area is 1.6 mm2 and there are about 1,230 FETs. A new DC/DC level converter has been developed for use in high-speed, low-power storage circuits such as SRAMs and register files. The level converter can increase the DC voltage, which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. The power dissipation (P) of the 32-word register file with on-chip DC/DC level converters is 459 mW, a reduction to 25.2% of that of an equivalent conventional register file, while the operating frequency (fc) was 5.17 GHz that is 74.8% of fc for the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters is 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Designs of Building Blocks for High-Speed, Low-Power Processors
T2 - IEICE TRANSACTIONS on Electronics
SP - 331
EP - 338
AU - Tadayoshi ENOMOTO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2002
AB - A fast, low-power 16-bit adder, 32-word register file and 512-bit cache SRAM have been developed using 0.25-µm GaAs HEMT technology for future multi-GHz processors. The 16-bit adder, which uses a negative logic binary look-ahead carry structure based on NOR gates, operates at the maximum clock frequency of 1.67 GHz and consumes 134.4 mW at a supply voltage of 0.6 V. The active area is 1.6 mm2 and there are about 1,230 FETs. A new DC/DC level converter has been developed for use in high-speed, low-power storage circuits such as SRAMs and register files. The level converter can increase the DC voltage, which is supplied to an active-load circuit on request, or supply a minimal DC voltage to a load circuit in the stand-by mode. The power dissipation (P) of the 32-word register file with on-chip DC/DC level converters is 459 mW, a reduction to 25.2% of that of an equivalent conventional register file, while the operating frequency (fc) was 5.17 GHz that is 74.8% of fc for the conventional register file. P for the 512-bit cache SRAM with the new DC/DC level converters is 34.3 mW, 89.7% of the value for an equivalent conventional cache SRAM, with the read-access time of 455 psec, only 1.1% longer than that of the conventional cache SRAM.
ER -
English
