Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model
Summary :
The radio-frequency thermal noise in fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. It is shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because of smaller channel capacitance.
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- IEICE TRANSACTIONS on Electronics Vol.E85-C No.7 pp.1443-1450
- Publication Date
- 2002/07/01
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- Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
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Daijiro SUMINO, Yasuhisa OMURA, "Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1443-1450, July 2002, doi: .
Abstract: The radio-frequency thermal noise in fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. It is shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because of smaller channel capacitance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1443/_p
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@ARTICLE{e85-c_7_1443,
author={Daijiro SUMINO, Yasuhisa OMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model},
year={2002},
volume={E85-C},
number={7},
pages={1443-1450},
abstract={The radio-frequency thermal noise in fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. It is shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because of smaller channel capacitance.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1443
EP - 1450
AU - Daijiro SUMINO
AU - Yasuhisa OMURA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - The radio-frequency thermal noise in fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. It is shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because of smaller channel capacitance.
ER -
English
