Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model
Summary :
Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.8 pp.1664-1668
- Publication Date
- 2002/08/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Integrated Electronics
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Yong-Ha PARK, Jeonghoon KOOK, Hoi-Jun YOO, "Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 8, pp. 1664-1668, August 2002, doi: .
Abstract: Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_8_1664/_p
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@ARTICLE{e85-c_8_1664,
author={Yong-Ha PARK, Jeonghoon KOOK, Hoi-Jun YOO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model},
year={2002},
volume={E85-C},
number={8},
pages={1664-1668},
abstract={Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1664
EP - 1668
AU - Yong-Ha PARK
AU - Jeonghoon KOOK
AU - Hoi-Jun YOO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2002
AB - Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
ER -
English
