Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool
Summary :
A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1935-1942
- Publication Date
- 2003/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Juergen RAMM, Hans von KANEL, "Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1935-1942, October 2003, doi: .
Abstract: A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1935/_p
Copy
@ARTICLE{e86-c_10_1935,
author={Juergen RAMM, Hans von KANEL, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool},
year={2003},
volume={E86-C},
number={10},
pages={1935-1942},
abstract={A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool
T2 - IEICE TRANSACTIONS on Electronics
SP - 1935
EP - 1942
AU - Juergen RAMM
AU - Hans von KANEL
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.
ER -
English
