RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi UMEZAWA; Shingo MIYAMOTO; Hiroki MATSUDAIRA; Hiroaki ISHIZAKA; Kwang-Soup SONG; Minoru TACHIKI; Hiroshi KAWARADA

RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi UMEZAWA, Shingo MIYAMOTO, Hiroki MATSUDAIRA, Hiroaki ISHIZAKA, Kwang-Soup SONG, Minoru TACHIKI, Hiroshi KAWARADA

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RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1949-1954

Publication Date: 2003/10/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Hitoshi UMEZAWA, Shingo MIYAMOTO, Hiroki MATSUDAIRA, Hiroaki ISHIZAKA, Kwang-Soup SONG, Minoru TACHIKI, Hiroshi KAWARADA, "RF Performance of Diamond Surface-Channel Field-Effect Transistors" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 1949-1954, October 2003, doi: .
Abstract: RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1949/_p

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@ARTICLE{e86-c_10_1949,
author={Hitoshi UMEZAWA, Shingo MIYAMOTO, Hiroki MATSUDAIRA, Hiroaki ISHIZAKA, Kwang-Soup SONG, Minoru TACHIKI, Hiroshi KAWARADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Performance of Diamond Surface-Channel Field-Effect Transistors},
year={2003},
volume={E86-C},
number={10},
pages={1949-1954},
abstract={RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - RF Performance of Diamond Surface-Channel Field-Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1949
EP - 1954
AU - Hitoshi UMEZAWA
AU - Shingo MIYAMOTO
AU - Hiroki MATSUDAIRA
AU - Hiroaki ISHIZAKA
AU - Kwang-Soup SONG
AU - Minoru TACHIKI
AU - Hiroshi KAWARADA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 µ m gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.
ER -