Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium
Summary :
The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement. In the present experiment, the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough, this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1994-1999
- Publication Date
- 2003/10/01
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- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
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Jimpei TABATA, Kouichi HIRANAKA, Tohru SAITOH, Takeshi NAGASHIMA, Masanori HANGYO, "Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1994-1999, October 2003, doi: .
Abstract: The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement. In the present experiment, the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough, this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1994/_p
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@ARTICLE{e86-c_10_1994,
author={Jimpei TABATA, Kouichi HIRANAKA, Tohru SAITOH, Takeshi NAGASHIMA, Masanori HANGYO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium},
year={2003},
volume={E86-C},
number={10},
pages={1994-1999},
abstract={The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement. In the present experiment, the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough, this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium
T2 - IEICE TRANSACTIONS on Electronics
SP - 1994
EP - 1999
AU - Jimpei TABATA
AU - Kouichi HIRANAKA
AU - Tohru SAITOH
AU - Takeshi NAGASHIMA
AU - Masanori HANGYO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement. In the present experiment, the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough, this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.
ER -
English
