Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures

Hideo TAKEUCHI; Yoshitsugu YAMAMOTO; Ryo HATTORI; Takahide ISHIKAWA; Masaaki NAKAYAMA

Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures

Hideo TAKEUCHI, Yoshitsugu YAMAMOTO, Ryo HATTORI, Takahide ISHIKAWA, Masaaki NAKAYAMA

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We propose an analysis method for Franz-Keldysh (FK) oscillations appearing in photoreflectance (PR) spectra of heterojunction device structures, which enables precise and simultaneous evaluation of the built-in electric field strength and band-gap energy. Samples for PR measurements were n⁺-GaAs/n-Al_0.3 Ga_0.7 As/i-GaAs heterostructures with different Al_0.3Ga_0.7As-layer thickness. We have found that the phase of the FK oscillations originating from the i-GaAs buffer layer depends on the Al_0.3 Ga_0.7 As-layer thickness. We have derived a calculation model for FK oscillations that includes the interference of probe light. From the comparison of the calculated spectra with the measured spectra, we conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. Our FK-oscillation analysis method reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2015-2021

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Hideo TAKEUCHI, Yoshitsugu YAMAMOTO, Ryo HATTORI, Takahide ISHIKAWA, Masaaki NAKAYAMA, "Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2015-2021, October 2003, doi: .
Abstract: We propose an analysis method for Franz-Keldysh (FK) oscillations appearing in photoreflectance (PR) spectra of heterojunction device structures, which enables precise and simultaneous evaluation of the built-in electric field strength and band-gap energy. Samples for PR measurements were n⁺-GaAs/n-Al_0.3 Ga_0.7 As/i-GaAs heterostructures with different Al_0.3Ga_0.7As-layer thickness. We have found that the phase of the FK oscillations originating from the i-GaAs buffer layer depends on the Al_0.3 Ga_0.7 As-layer thickness. We have derived a calculation model for FK oscillations that includes the interference of probe light. From the comparison of the calculated spectra with the measured spectra, we conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. Our FK-oscillation analysis method reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2015/_p

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@ARTICLE{e86-c_10_2015,
author={Hideo TAKEUCHI, Yoshitsugu YAMAMOTO, Ryo HATTORI, Takahide ISHIKAWA, Masaaki NAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures},
year={2003},
volume={E86-C},
number={10},
pages={2015-2021},
abstract={We propose an analysis method for Franz-Keldysh (FK) oscillations appearing in photoreflectance (PR) spectra of heterojunction device structures, which enables precise and simultaneous evaluation of the built-in electric field strength and band-gap energy. Samples for PR measurements were n⁺-GaAs/n-Al_0.3 Ga_0.7 As/i-GaAs heterostructures with different Al_0.3Ga_0.7As-layer thickness. We have found that the phase of the FK oscillations originating from the i-GaAs buffer layer depends on the Al_0.3 Ga_0.7 As-layer thickness. We have derived a calculation model for FK oscillations that includes the interference of probe light. From the comparison of the calculated spectra with the measured spectra, we conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. Our FK-oscillation analysis method reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures
T2 - IEICE TRANSACTIONS on Electronics
SP - 2015
EP - 2021
AU - Hideo TAKEUCHI
AU - Yoshitsugu YAMAMOTO
AU - Ryo HATTORI
AU - Takahide ISHIKAWA
AU - Masaaki NAKAYAMA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We propose an analysis method for Franz-Keldysh (FK) oscillations appearing in photoreflectance (PR) spectra of heterojunction device structures, which enables precise and simultaneous evaluation of the built-in electric field strength and band-gap energy. Samples for PR measurements were n⁺-GaAs/n-Al_0.3 Ga_0.7 As/i-GaAs heterostructures with different Al_0.3Ga_0.7As-layer thickness. We have found that the phase of the FK oscillations originating from the i-GaAs buffer layer depends on the Al_0.3 Ga_0.7 As-layer thickness. We have derived a calculation model for FK oscillations that includes the interference of probe light. From the comparison of the calculated spectra with the measured spectra, we conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. Our FK-oscillation analysis method reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.
ER -