Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
Summary :
We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2022-2026
- Publication Date
- 2003/10/01
- Publicized
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- Type of Manuscript
- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
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Toshinobu MATSUNO, Atsuhiko KANDA, Tsuyoshi TANAKA, "Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2022-2026, October 2003, doi: .
Abstract: We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2022/_p
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@ARTICLE{e86-c_10_2022,
author={Toshinobu MATSUNO, Atsuhiko KANDA, Tsuyoshi TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector},
year={2003},
volume={E86-C},
number={10},
pages={2022-2026},
abstract={We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
T2 - IEICE TRANSACTIONS on Electronics
SP - 2022
EP - 2026
AU - Toshinobu MATSUNO
AU - Atsuhiko KANDA
AU - Tsuyoshi TANAKA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.
ER -
English
