1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes

Ryusuke NAKASAKI; Mitsumasa ITO; Satoshi ARAKAWA; Akihiko KASUKAWA

1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes

Ryusuke NAKASAKI, Mitsumasa ITO, Satoshi ARAKAWA, Akihiko KASUKAWA

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We fabricated 1.3µm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer and an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. I-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300µ m-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76 K from 20 to 85. We obtained a good linearity up to 100mA at 85. Therefore the inner-stripe LD has an advantage of high power devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.5 pp.749-752

Publication Date: 2003/05/01

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Type of Manuscript: Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)

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Ryusuke NAKASAKI, Mitsumasa ITO, Satoshi ARAKAWA, Akihiko KASUKAWA, "1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 5, pp. 749-752, May 2003, doi: .
Abstract: We fabricated 1.3µm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer and an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. I-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300µ m-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76 K from 20 to 85. We obtained a good linearity up to 100mA at 85. Therefore the inner-stripe LD has an advantage of high power devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_5_749/_p

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@ARTICLE{e86-c_5_749,
author={Ryusuke NAKASAKI, Mitsumasa ITO, Satoshi ARAKAWA, Akihiko KASUKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes},
year={2003},
volume={E86-C},
number={5},
pages={749-752},
abstract={We fabricated 1.3µm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer and an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. I-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300µ m-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76 K from 20 to 85. We obtained a good linearity up to 100mA at 85. Therefore the inner-stripe LD has an advantage of high power devices.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - 1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 749
EP - 752
AU - Ryusuke NAKASAKI
AU - Mitsumasa ITO
AU - Satoshi ARAKAWA
AU - Akihiko KASUKAWA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2003
AB - We fabricated 1.3µm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer and an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. I-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300µ m-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76 K from 20 to 85. We obtained a good linearity up to 100mA at 85. Therefore the inner-stripe LD has an advantage of high power devices.
ER -