Trends in High-Density Flash Memory Technologies
Summary :
This paper reviews process, device and circuit technologies of high-density flash memories, whose market has grown explosively as bridge media. In this memory, programming throughput as well as low bit costs is critical issue. To meet the requirements, we have developed multi-level AG (Assist Gate)-AND type flash memory with small effective cell size and 10 MB/s programming throughput. We clarify three challenges to the multilevel flash memory in terms of operation method, high reliability for data retention, and high-speed multilevel programming. Future trends of high-density flash memories are also discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.10 pp.1656-1663
- Publication Date
- 2004/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
- Category
- Flash Memory
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Takashi KOBAYASHI, Hideaki KURATA, Katsutaka KIMURA, "Trends in High-Density Flash Memory Technologies" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 10, pp. 1656-1663, October 2004, doi: .
Abstract: This paper reviews process, device and circuit technologies of high-density flash memories, whose market has grown explosively as bridge media. In this memory, programming throughput as well as low bit costs is critical issue. To meet the requirements, we have developed multi-level AG (Assist Gate)-AND type flash memory with small effective cell size and 10 MB/s programming throughput. We clarify three challenges to the multilevel flash memory in terms of operation method, high reliability for data retention, and high-speed multilevel programming. Future trends of high-density flash memories are also discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_10_1656/_p
Copy
@ARTICLE{e87-c_10_1656,
author={Takashi KOBAYASHI, Hideaki KURATA, Katsutaka KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Trends in High-Density Flash Memory Technologies},
year={2004},
volume={E87-C},
number={10},
pages={1656-1663},
abstract={This paper reviews process, device and circuit technologies of high-density flash memories, whose market has grown explosively as bridge media. In this memory, programming throughput as well as low bit costs is critical issue. To meet the requirements, we have developed multi-level AG (Assist Gate)-AND type flash memory with small effective cell size and 10 MB/s programming throughput. We clarify three challenges to the multilevel flash memory in terms of operation method, high reliability for data retention, and high-speed multilevel programming. Future trends of high-density flash memories are also discussed.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Trends in High-Density Flash Memory Technologies
T2 - IEICE TRANSACTIONS on Electronics
SP - 1656
EP - 1663
AU - Takashi KOBAYASHI
AU - Hideaki KURATA
AU - Katsutaka KIMURA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2004
AB - This paper reviews process, device and circuit technologies of high-density flash memories, whose market has grown explosively as bridge media. In this memory, programming throughput as well as low bit costs is critical issue. To meet the requirements, we have developed multi-level AG (Assist Gate)-AND type flash memory with small effective cell size and 10 MB/s programming throughput. We clarify three challenges to the multilevel flash memory in terms of operation method, high reliability for data retention, and high-speed multilevel programming. Future trends of high-density flash memories are also discussed.
ER -
English
