IEICE TRANSACTIONS on Electronics
Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation
Summary :
With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E102-C No.9 pp.646-657
- Publication Date
- 2019/09/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2018ECP5079
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Yingzhe WU
University of Electronic Science and Technology of China (UESTC)
Hui LI
University of Electronic Science and Technology of China (UESTC)
Wenjie MA
University of Electronic Science and Technology of China (UESTC)
Dingxin JIN
University of Electronic Science and Technology of China (UESTC)
Keyword
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Yingzhe WU, Hui LI, Wenjie MA, Dingxin JIN, "Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 9, pp. 646-657, September 2019, doi: 10.1587/transele.2018ECP5079.
Abstract: With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECP5079/_p
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@ARTICLE{e102-c_9_646,
author={Yingzhe WU, Hui LI, Wenjie MA, Dingxin JIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation},
year={2019},
volume={E102-C},
number={9},
pages={646-657},
abstract={With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.},
keywords={},
doi={10.1587/transele.2018ECP5079},
ISSN={1745-1353},
month={September},}
Copy
TY - JOUR
TI - Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation
T2 - IEICE TRANSACTIONS on Electronics
SP - 646
EP - 657
AU - Yingzhe WU
AU - Hui LI
AU - Wenjie MA
AU - Dingxin JIN
PY - 2019
DO - 10.1587/transele.2018ECP5079
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2019
AB - With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.
ER -
English
