AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs

Shun-ichiro OHMI; Mizuha HIROKI; Yasutaka MAEDA

doi:10.1587/transele.2018OMP0008

AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs

Shun-ichiro OHMI, Mizuha HIROKI, Yasutaka MAEDA

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The AuGe-alloy source and drain (S/D) formed on SiO₂/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10^-3 cm²/(Vs), it was able to be increased to 5.5×10^-2 cm²/(Vs) by the surface cleaning utilizing H₂SO₄/H₂O₂ mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.

Publication: IEICE TRANSACTIONS on Electronics Vol.E102-C No.2 pp.138-142

Publication Date: 2019/02/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.2018OMP0008

Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics and Biotechnology)

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Authors

Shun-ichiro OHMI
  Tokyo Institute of Technology
Mizuha HIROKI
  Tokyo Institute of Technology
Yasutaka MAEDA
  Tokyo Institute of Technology

Keyword

AuGe, bottom-contact, pentacene, OFET, lift-off, yield, SPM cleaning, PMA process

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Shun-ichiro OHMI, Mizuha HIROKI, Yasutaka MAEDA, "AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs" in IEICE TRANSACTIONS on Electronics, vol. E102-C, no. 2, pp. 138-142, February 2019, doi: 10.1587/transele.2018OMP0008.
Abstract: The AuGe-alloy source and drain (S/D) formed on SiO₂/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10^-3 cm²/(Vs), it was able to be increased to 5.5×10^-2 cm²/(Vs) by the surface cleaning utilizing H₂SO₄/H₂O₂ mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018OMP0008/_p

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@ARTICLE{e102-c_2_138,
author={Shun-ichiro OHMI, Mizuha HIROKI, Yasutaka MAEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs},
year={2019},
volume={E102-C},
number={2},
pages={138-142},
abstract={The AuGe-alloy source and drain (S/D) formed on SiO₂/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10^-3 cm²/(Vs), it was able to be increased to 5.5×10^-2 cm²/(Vs) by the surface cleaning utilizing H₂SO₄/H₂O₂ mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.},
keywords={},
doi={10.1587/transele.2018OMP0008},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 138
EP - 142
AU - Shun-ichiro OHMI
AU - Mizuha HIROKI
AU - Yasutaka MAEDA
PY - 2019
DO - 10.1587/transele.2018OMP0008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2019
AB - The AuGe-alloy source and drain (S/D) formed on SiO₂/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10^-3 cm²/(Vs), it was able to be increased to 5.5×10^-2 cm²/(Vs) by the surface cleaning utilizing H₂SO₄/H₂O₂ mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.
ER -