This paper proposes and demonstrates a 65nm CMOS process cascode single-inductor-dual-output (SIDO) boost converter whose outputs are Li-ion battery and 1V low voltage supply for RF wireless power transfer (WPT) receiver. The 1V power supply is used for internal control circuits to reduce power consumption. In order to withstand 4.2V Li-ion battery output, cascode 2.5V I/O PFETs are used at the power stage. On the other hand, to generate 1V while maintaining 4.2V tolerance at 1V output, cascode 2.5V I/O NFETs output stage is proposed. Measurement results show conversion efficiency of 87% at PIN=7mW, ILOAD=1.6mA and VBAT=4.0V, and 89% at PIN=7.9mW, ILOAD=2.1mA and VBAT=3.4V.
Yasuaki ISSHIKI
Shinshu University
Dai SUZUKI
Shinshu University
Ryo ISHIDA
Shinshu University
Kousuke MIYAJI
Shinshu University
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Yasuaki ISSHIKI, Dai SUZUKI, Ryo ISHIDA, Kousuke MIYAJI, "A 65nm CMOS Process Li-Ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 10, pp. 472-479, October 2020, doi: 10.1587/transele.2019CTP0003.
Abstract: This paper proposes and demonstrates a 65nm CMOS process cascode single-inductor-dual-output (SIDO) boost converter whose outputs are Li-ion battery and 1V low voltage supply for RF wireless power transfer (WPT) receiver. The 1V power supply is used for internal control circuits to reduce power consumption. In order to withstand 4.2V Li-ion battery output, cascode 2.5V I/O PFETs are used at the power stage. On the other hand, to generate 1V while maintaining 4.2V tolerance at 1V output, cascode 2.5V I/O NFETs output stage is proposed. Measurement results show conversion efficiency of 87% at PIN=7mW, ILOAD=1.6mA and VBAT=4.0V, and 89% at PIN=7.9mW, ILOAD=2.1mA and VBAT=3.4V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019CTP0003/_p
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@ARTICLE{e103-c_10_472,
author={Yasuaki ISSHIKI, Dai SUZUKI, Ryo ISHIDA, Kousuke MIYAJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 65nm CMOS Process Li-Ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver},
year={2020},
volume={E103-C},
number={10},
pages={472-479},
abstract={This paper proposes and demonstrates a 65nm CMOS process cascode single-inductor-dual-output (SIDO) boost converter whose outputs are Li-ion battery and 1V low voltage supply for RF wireless power transfer (WPT) receiver. The 1V power supply is used for internal control circuits to reduce power consumption. In order to withstand 4.2V Li-ion battery output, cascode 2.5V I/O PFETs are used at the power stage. On the other hand, to generate 1V while maintaining 4.2V tolerance at 1V output, cascode 2.5V I/O NFETs output stage is proposed. Measurement results show conversion efficiency of 87% at PIN=7mW, ILOAD=1.6mA and VBAT=4.0V, and 89% at PIN=7.9mW, ILOAD=2.1mA and VBAT=3.4V.},
keywords={},
doi={10.1587/transele.2019CTP0003},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - A 65nm CMOS Process Li-Ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver
T2 - IEICE TRANSACTIONS on Electronics
SP - 472
EP - 479
AU - Yasuaki ISSHIKI
AU - Dai SUZUKI
AU - Ryo ISHIDA
AU - Kousuke MIYAJI
PY - 2020
DO - 10.1587/transele.2019CTP0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2020
AB - This paper proposes and demonstrates a 65nm CMOS process cascode single-inductor-dual-output (SIDO) boost converter whose outputs are Li-ion battery and 1V low voltage supply for RF wireless power transfer (WPT) receiver. The 1V power supply is used for internal control circuits to reduce power consumption. In order to withstand 4.2V Li-ion battery output, cascode 2.5V I/O PFETs are used at the power stage. On the other hand, to generate 1V while maintaining 4.2V tolerance at 1V output, cascode 2.5V I/O NFETs output stage is proposed. Measurement results show conversion efficiency of 87% at PIN=7mW, ILOAD=1.6mA and VBAT=4.0V, and 89% at PIN=7.9mW, ILOAD=2.1mA and VBAT=3.4V.
ER -