Open Access
Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
-
Full Text Views
120
- Cite this
- Free PDF (772.6KB)
Summary :
TCAD simulation was performed to investigate the material properties of an AlGaN/GaN structure in Deep Acceptor (DA)-rich and Deep Donor (DD)-rich GaN cases. DD-rich semi-insulating GaN generated a positively charged area thereof to prevent the electron concentration in 2DEG from decreasing, while a DA-rich counterpart caused electron depletion, which was the origin of the current collapse in AlGaN/GaN HFETs. These simulation results were well verified experimentally using three nitride samples including buffer-GaN layers with carbon concentration ([C]) of 5×1017, 5×1018, and 4×1019 cm-3. DD-rich behaviors were observed for the sample with [C]=4×1019 cm-3, and DD energy level EDD=0.6 eV was estimated by the Arrhenius plot of temperature-dependent IDS. This EDD value coincided with the previously estimated EDD. The backgate experiments revealed that these DD-rich semi-insulating GaN suppressed both current collapse and buffer leakage, thus providing characteristics desirable for practical usage.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E103-C No.4 pp.186-190
- Publication Date
- 2020/04/01
- Publicized
- 2019/10/11
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2019ECP5011
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Taketoshi TANAKA
Rohm Co., Ltd.
Norikazu ITO
Rohm Co., Ltd.
Shinya TAKADO
Rohm Co., Ltd.
Masaaki KUZUHARA
University of Fukui
Ken NAKAHARA
Rohm Co., Ltd.
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Taketoshi TANAKA, Norikazu ITO, Shinya TAKADO, Masaaki KUZUHARA, Ken NAKAHARA, "Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 4, pp. 186-190, April 2020, doi: 10.1587/transele.2019ECP5011.
Abstract: TCAD simulation was performed to investigate the material properties of an AlGaN/GaN structure in Deep Acceptor (DA)-rich and Deep Donor (DD)-rich GaN cases. DD-rich semi-insulating GaN generated a positively charged area thereof to prevent the electron concentration in 2DEG from decreasing, while a DA-rich counterpart caused electron depletion, which was the origin of the current collapse in AlGaN/GaN HFETs. These simulation results were well verified experimentally using three nitride samples including buffer-GaN layers with carbon concentration ([C]) of 5×1017, 5×1018, and 4×1019 cm-3. DD-rich behaviors were observed for the sample with [C]=4×1019 cm-3, and DD energy level EDD=0.6 eV was estimated by the Arrhenius plot of temperature-dependent IDS. This EDD value coincided with the previously estimated EDD. The backgate experiments revealed that these DD-rich semi-insulating GaN suppressed both current collapse and buffer leakage, thus providing characteristics desirable for practical usage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019ECP5011/_p
Copy
@ARTICLE{e103-c_4_186,
author={Taketoshi TANAKA, Norikazu ITO, Shinya TAKADO, Masaaki KUZUHARA, Ken NAKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si},
year={2020},
volume={E103-C},
number={4},
pages={186-190},
abstract={TCAD simulation was performed to investigate the material properties of an AlGaN/GaN structure in Deep Acceptor (DA)-rich and Deep Donor (DD)-rich GaN cases. DD-rich semi-insulating GaN generated a positively charged area thereof to prevent the electron concentration in 2DEG from decreasing, while a DA-rich counterpart caused electron depletion, which was the origin of the current collapse in AlGaN/GaN HFETs. These simulation results were well verified experimentally using three nitride samples including buffer-GaN layers with carbon concentration ([C]) of 5×1017, 5×1018, and 4×1019 cm-3. DD-rich behaviors were observed for the sample with [C]=4×1019 cm-3, and DD energy level EDD=0.6 eV was estimated by the Arrhenius plot of temperature-dependent IDS. This EDD value coincided with the previously estimated EDD. The backgate experiments revealed that these DD-rich semi-insulating GaN suppressed both current collapse and buffer leakage, thus providing characteristics desirable for practical usage.},
keywords={},
doi={10.1587/transele.2019ECP5011},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
T2 - IEICE TRANSACTIONS on Electronics
SP - 186
EP - 190
AU - Taketoshi TANAKA
AU - Norikazu ITO
AU - Shinya TAKADO
AU - Masaaki KUZUHARA
AU - Ken NAKAHARA
PY - 2020
DO - 10.1587/transele.2019ECP5011
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2020
AB - TCAD simulation was performed to investigate the material properties of an AlGaN/GaN structure in Deep Acceptor (DA)-rich and Deep Donor (DD)-rich GaN cases. DD-rich semi-insulating GaN generated a positively charged area thereof to prevent the electron concentration in 2DEG from decreasing, while a DA-rich counterpart caused electron depletion, which was the origin of the current collapse in AlGaN/GaN HFETs. These simulation results were well verified experimentally using three nitride samples including buffer-GaN layers with carbon concentration ([C]) of 5×1017, 5×1018, and 4×1019 cm-3. DD-rich behaviors were observed for the sample with [C]=4×1019 cm-3, and DD energy level EDD=0.6 eV was estimated by the Arrhenius plot of temperature-dependent IDS. This EDD value coincided with the previously estimated EDD. The backgate experiments revealed that these DD-rich semi-insulating GaN suppressed both current collapse and buffer leakage, thus providing characteristics desirable for practical usage.
ER -
English
