We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.
Wenlun ZHANG
University of London (LSE),University of Colorado Boulder,Micron Technology, Inc.
Baokang WANG
Micron Technology, Inc.
JLFET, TCAD, GIDL, BTBT, GAA transistor
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Wenlun ZHANG, Baokang WANG, "Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 8, pp. 379-385, August 2021, doi: 10.1587/transele.2020ECP5042.
Abstract: We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECP5042/_p
Copy
@ARTICLE{e104-c_8_379,
author={Wenlun ZHANG, Baokang WANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide},
year={2021},
volume={E104-C},
number={8},
pages={379-385},
abstract={We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.},
keywords={},
doi={10.1587/transele.2020ECP5042},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 379
EP - 385
AU - Wenlun ZHANG
AU - Baokang WANG
PY - 2021
DO - 10.1587/transele.2020ECP5042
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2021
AB - We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.
ER -