Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

Kousuke MIYAJI

doi:10.1587/transele.2021CTI0001

Open Access
Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

Kousuke MIYAJI

Full Text Views

94

Cite this

Free PDF (2.1MB)

Summary :

There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The advancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D-integration of Fe-based metal composite magnetic core inductor, and GaN FET control designs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.521-533

Publication Date: 2022/10/01

Publicized: 2022/04/20

Online ISSN: 1745-1353

DOI: 10.1587/transele.2021CTI0001

Type of Manuscript: Special Section INVITED PAPER (Special Section on Analog Circuits and Their Application Technologies)

Category

Authors

Kousuke MIYAJI
Shinshu University

Keyword

DC-DC converter, high switching frequency, 3-D integration, integrated inductor, GaN FET

Cite this

Copy

Kousuke MIYAJI, "Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter" in IEICE TRANSACTIONS on Electronics, vol. E105-C, no. 10, pp. 521-533, October 2022, doi: 10.1587/transele.2021CTI0001.
Abstract: There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The advancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D-integration of Fe-based metal composite magnetic core inductor, and GaN FET control designs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021CTI0001/_p

Copy

@ARTICLE{e105-c_10_521,
author={Kousuke MIYAJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter},
year={2022},
volume={E105-C},
number={10},
pages={521-533},
abstract={There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The advancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D-integration of Fe-based metal composite magnetic core inductor, and GaN FET control designs.},
keywords={},
doi={10.1587/transele.2021CTI0001},
ISSN={1745-1353},
month={October},}

Copy

TY - JOUR
TI - Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter
T2 - IEICE TRANSACTIONS on Electronics
SP - 521
EP - 533
AU - Kousuke MIYAJI
PY - 2022
DO - 10.1587/transele.2021CTI0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The advancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D-integration of Fe-based metal composite magnetic core inductor, and GaN FET control designs.
ER -