Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure
Summary :
This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E105-C No.8 pp.369-374
- Publication Date
- 2022/08/01
- Publicized
- 2022/01/26
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021ECP5049
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Naoto MATSUO
University of Hyogo
Kazuki YOSHIDA
University of Hyogo
Koji SUMITOMO
University of Hyogo
Kazushige YAMANA
University of Hyogo
Tetsuo TABEI
Hiroshima University
Keyword
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Naoto MATSUO, Kazuki YOSHIDA, Koji SUMITOMO, Kazushige YAMANA, Tetsuo TABEI, "Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 8, pp. 369-374, August 2022, doi: 10.1587/transele.2021ECP5049.
Abstract: This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5049/_p
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@ARTICLE{e105-c_8_369,
author={Naoto MATSUO, Kazuki YOSHIDA, Koji SUMITOMO, Kazushige YAMANA, Tetsuo TABEI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure},
year={2022},
volume={E105-C},
number={8},
pages={369-374},
abstract={This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.},
keywords={},
doi={10.1587/transele.2021ECP5049},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 369
EP - 374
AU - Naoto MATSUO
AU - Kazuki YOSHIDA
AU - Koji SUMITOMO
AU - Kazushige YAMANA
AU - Tetsuo TABEI
PY - 2022
DO - 10.1587/transele.2021ECP5049
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2022
AB - This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.
ER -
English
