This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.

Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.