IEICE TRANSACTIONS on Electronics
Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs
Summary :
Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.3 pp.371-375
- Publication Date
- 2016/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.371
- Type of Manuscript
- Special Section PAPER (Special Section on Progress towards System Nanotechnology)
- Category
Authors
Yuta INAGAKI
Tokyo University of Science
Kazuya HAYASE
Tokyo University of Science
Ryosuke CHIBA
Tokyo University of Science
Hokuto IIJIMA
Tokyo University of Science
Takashi MEGURO
Tokyo University of Science
Keyword
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Yuta INAGAKI, Kazuya HAYASE, Ryosuke CHIBA, Hokuto IIJIMA, Takashi MEGURO, "Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 3, pp. 371-375, March 2016, doi: 10.1587/transele.E99.C.371.
Abstract: Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.371/_p
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@ARTICLE{e99-c_3_371,
author={Yuta INAGAKI, Kazuya HAYASE, Ryosuke CHIBA, Hokuto IIJIMA, Takashi MEGURO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs},
year={2016},
volume={E99-C},
number={3},
pages={371-375},
abstract={Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.},
keywords={},
doi={10.1587/transele.E99.C.371},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs
T2 - IEICE TRANSACTIONS on Electronics
SP - 371
EP - 375
AU - Yuta INAGAKI
AU - Kazuya HAYASE
AU - Ryosuke CHIBA
AU - Hokuto IIJIMA
AU - Takashi MEGURO
PY - 2016
DO - 10.1587/transele.E99.C.371
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2016
AB - Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.
ER -
English
