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Atsushi A. YAMAGUCHI Kohei KAWAKAMI Naoto SHIMIZU Yuchi TAKAHASHI Genki KOBAYASHI Takashi NAKANO Shigeta SAKAI Yuya KANITANI Shigetaka TOMIYA
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.
Yuta INAGAKI Kazuya HAYASE Ryosuke CHIBA Hokuto IIJIMA Takashi MEGURO
Quantum efficiency (QE) evolution by several negative electron affinity (NEA) activation process for p-doped GaAs(100) specimen has been studied. We have carried out the surface pretreatment at 580°C or 480°C and the successive NEA activation process at room temperature (R.T.). When the NEA surface was degraded, the surface was refreshed by above pretreatment and activation process, and approximately 0.10 of QE was repeatedly obtained. It was found that the higher QE of 0.13 was achieved with the reduced pretreatment temperature at 480°C with the specific experimental conditions. This is probably caused by the residual Cs-related compounds playing an important role of the electron emission. In addition, after the multiple pretreatment and activation sequence, surface morphology of GaAs remarkably changed.
Roman SOBOLEWSKI Ying XU Xuemei ZHENG Carlo WILLIAMS Jin ZHANG Aleksandr VEREVKIN Galina CHULKOVA Alexander KORNEEV Andrey LIPATOV Oleg OKUNEV Konstantin SMIRNOV Gregory N. GOL'TSMAN
We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.