Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

Hiroshi YAMAMOTO; Ken KIKUCHI; Valeria VADALÀ; Gianni BOSI; Antonio RAFFO; Giorgio VANNINI

doi:10.1587/transele.2022MMI0003

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Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

Hiroshi YAMAMOTO, Ken KIKUCHI, Valeria VADALÀ, Gianni BOSI, Antonio RAFFO, Giorgio VANNINI

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This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F^-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F^-1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.

Publication: IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.449-456

Publication Date: 2022/10/01

Publicized: 2022/03/25

Online ISSN: 1745-1353

DOI: 10.1587/transele.2022MMI0003

Type of Manuscript: Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)

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Authors

Hiroshi YAMAMOTO
  Sumitomo Electric Industries, Ltd.
Ken KIKUCHI
  Sumitomo Electric Industries, Ltd.
Valeria VADALÀ
  University of Ferrara
Gianni BOSI
  University of Ferrara
Antonio RAFFO
  University of Ferrara
Giorgio VANNINI
  University of Ferrara

Keyword

HEMTs, microwave amplifiers, harmonics, waveform engineering

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Hiroshi YAMAMOTO, Ken KIKUCHI, Valeria VADALÀ, Gianni BOSI, Antonio RAFFO, Giorgio VANNINI, "Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers" in IEICE TRANSACTIONS on Electronics, vol. E105-C, no. 10, pp. 449-456, October 2022, doi: 10.1587/transele.2022MMI0003.
Abstract: This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F^-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F^-1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022MMI0003/_p

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@ARTICLE{e105-c_10_449,
author={Hiroshi YAMAMOTO, Ken KIKUCHI, Valeria VADALÀ, Gianni BOSI, Antonio RAFFO, Giorgio VANNINI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers},
year={2022},
volume={E105-C},
number={10},
pages={449-456},
abstract={This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F^-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F^-1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.},
keywords={},
doi={10.1587/transele.2022MMI0003},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 449
EP - 456
AU - Hiroshi YAMAMOTO
AU - Ken KIKUCHI
AU - Valeria VADALÀ
AU - Gianni BOSI
AU - Antonio RAFFO
AU - Giorgio VANNINI
PY - 2022
DO - 10.1587/transele.2022MMI0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F^-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F^-1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.
ER -