IEICE TRANSACTIONS on Electronics
Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application
Summary :
Thermoelectric effect of Ga-Sn-O (GTO) thin films has been investigated for Internet-of-Things application. It is found that the amorphous GTO thin films provide higher power factors (PF) than the polycrystalline ones, which is because grain boundaries block the electron conduction in the polycrystalline ones. It is also found that the GTO thin films annealed in vacuum provide higher PF than those annealed in air, which is because oxygen vacancies are terminated in those annealed in air. The PF and dimensionless figure of merit (ZT) is not so excellent, but the cost effectiveness is excellent, which is the most important for some examples of the Internet-of-Things application.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E107-C No.1 pp.18-21
- Publication Date
- 2024/01/01
- Publicized
- 2023/07/10
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2023ECS6005
- Type of Manuscript
- BRIEF PAPER
- Category
- Electronic Materials
Authors
Yuhei YAMAMOTO
Ryukoku University
Naoki SHIBATA
Ryukoku University
Tokiyoshi MATSUDA
Ryukoku University,Kindai University
Hidenori KAWANISHI
Ryukoku University,Nara Institute of Science and Technology (NAIST)
Mutsumi KIMURA
Ryukoku University,Nara Institute of Science and Technology (NAIST)
Keyword
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Yuhei YAMAMOTO, Naoki SHIBATA, Tokiyoshi MATSUDA, Hidenori KAWANISHI, Mutsumi KIMURA, "Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application" in IEICE TRANSACTIONS on Electronics,
vol. E107-C, no. 1, pp. 18-21, January 2024, doi: 10.1587/transele.2023ECS6005.
Abstract: Thermoelectric effect of Ga-Sn-O (GTO) thin films has been investigated for Internet-of-Things application. It is found that the amorphous GTO thin films provide higher power factors (PF) than the polycrystalline ones, which is because grain boundaries block the electron conduction in the polycrystalline ones. It is also found that the GTO thin films annealed in vacuum provide higher PF than those annealed in air, which is because oxygen vacancies are terminated in those annealed in air. The PF and dimensionless figure of merit (ZT) is not so excellent, but the cost effectiveness is excellent, which is the most important for some examples of the Internet-of-Things application.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023ECS6005/_p
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@ARTICLE{e107-c_1_18,
author={Yuhei YAMAMOTO, Naoki SHIBATA, Tokiyoshi MATSUDA, Hidenori KAWANISHI, Mutsumi KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application},
year={2024},
volume={E107-C},
number={1},
pages={18-21},
abstract={Thermoelectric effect of Ga-Sn-O (GTO) thin films has been investigated for Internet-of-Things application. It is found that the amorphous GTO thin films provide higher power factors (PF) than the polycrystalline ones, which is because grain boundaries block the electron conduction in the polycrystalline ones. It is also found that the GTO thin films annealed in vacuum provide higher PF than those annealed in air, which is because oxygen vacancies are terminated in those annealed in air. The PF and dimensionless figure of merit (ZT) is not so excellent, but the cost effectiveness is excellent, which is the most important for some examples of the Internet-of-Things application.},
keywords={},
doi={10.1587/transele.2023ECS6005},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 18
EP - 21
AU - Yuhei YAMAMOTO
AU - Naoki SHIBATA
AU - Tokiyoshi MATSUDA
AU - Hidenori KAWANISHI
AU - Mutsumi KIMURA
PY - 2024
DO - 10.1587/transele.2023ECS6005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E107-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2024
AB - Thermoelectric effect of Ga-Sn-O (GTO) thin films has been investigated for Internet-of-Things application. It is found that the amorphous GTO thin films provide higher power factors (PF) than the polycrystalline ones, which is because grain boundaries block the electron conduction in the polycrystalline ones. It is also found that the GTO thin films annealed in vacuum provide higher PF than those annealed in air, which is because oxygen vacancies are terminated in those annealed in air. The PF and dimensionless figure of merit (ZT) is not so excellent, but the cost effectiveness is excellent, which is the most important for some examples of the Internet-of-Things application.
ER -
English
