Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes
Summary :
We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.2 pp.122-125
- Publication Date
- 2017/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.122
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Cuong Manh TRAN
Japan Advanced Institute of Science and Technology
Tatsuya MURAKAMI
Japan Advanced Institute of Science and Technology
Heisuke SAKAI
Japan Advanced Institute of Science and Technology
Hideyuki MURATA
Japan Advanced Institute of Science and Technology
Keyword
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Cuong Manh TRAN, Tatsuya MURAKAMI, Heisuke SAKAI, Hideyuki MURATA, "Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 2, pp. 122-125, February 2017, doi: 10.1587/transele.E100.C.122.
Abstract: We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.122/_p
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@ARTICLE{e100-c_2_122,
author={Cuong Manh TRAN, Tatsuya MURAKAMI, Heisuke SAKAI, Hideyuki MURATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes},
year={2017},
volume={E100-C},
number={2},
pages={122-125},
abstract={We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.},
keywords={},
doi={10.1587/transele.E100.C.122},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 122
EP - 125
AU - Cuong Manh TRAN
AU - Tatsuya MURAKAMI
AU - Heisuke SAKAI
AU - Hideyuki MURATA
PY - 2017
DO - 10.1587/transele.E100.C.122
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2017
AB - We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.
ER -
English
