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Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method
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Summary :
Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.2 pp.156-160
- Publication Date
- 2017/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.156
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
- Category
Authors
Eiji HIGURASHI
The University of Tokyo
Ken OKUMURA
The University of Tokyo
Yutaka KUNIMUNE
The University of Tokyo
Tadatomo SUGA
The University of Tokyo
Kei HAGIWARA
NHK Science and Technology Research Laboratories
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Eiji HIGURASHI, Ken OKUMURA, Yutaka KUNIMUNE, Tadatomo SUGA, Kei HAGIWARA, "Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 2, pp. 156-160, February 2017, doi: 10.1587/transele.E100.C.156.
Abstract: Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.156/_p
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@ARTICLE{e100-c_2_156,
author={Eiji HIGURASHI, Ken OKUMURA, Yutaka KUNIMUNE, Tadatomo SUGA, Kei HAGIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method},
year={2017},
volume={E100-C},
number={2},
pages={156-160},
abstract={Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.},
keywords={},
doi={10.1587/transele.E100.C.156},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 156
EP - 160
AU - Eiji HIGURASHI
AU - Ken OKUMURA
AU - Yutaka KUNIMUNE
AU - Tadatomo SUGA
AU - Kei HAGIWARA
PY - 2017
DO - 10.1587/transele.E100.C.156
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2017
AB - Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.
ER -
English
