An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language
Summary :
In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise Sid and gate noise Sig versus gate-source voltage for 0.25 µm pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.424-429
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.424
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
An-Sam PENG
National Chiao-Tung University
Lin-Kun WU
National Chiao-Tung University
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
An-Sam PENG, Lin-Kun WU, "An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 424-429, May 2017, doi: 10.1587/transele.E100.C.424.
Abstract: In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise Sid and gate noise Sig versus gate-source voltage for 0.25 µm pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.424/_p
Copy
@ARTICLE{e100-c_5_424,
author={An-Sam PENG, Lin-Kun WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language},
year={2017},
volume={E100-C},
number={5},
pages={424-429},
abstract={In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise Sid and gate noise Sig versus gate-source voltage for 0.25 µm pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.},
keywords={},
doi={10.1587/transele.E100.C.424},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language
T2 - IEICE TRANSACTIONS on Electronics
SP - 424
EP - 429
AU - An-Sam PENG
AU - Lin-Kun WU
PY - 2017
DO - 10.1587/transele.E100.C.424
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise Sid and gate noise Sig versus gate-source voltage for 0.25 µm pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.
ER -
English
