Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Summary :
In this paper, Epitaxial (Epi) Junction Termination Extension (JTE) technique for silicon carbide (SiC) power device is presented. Unlike conventional JTE, the Epi-JTE doesn't require high temperature (about 500°C) implantation process. Thus, it doesn't require high temperature (about 1700°C) process for implanted dose activation and surface defect curing. Therefore, the manufacturing cost will be decreased. Also, the fabrication process is very simple because the dose of the JTE is controlled by epitaxy growth. The blocking characteristic is analyzed through 2D-simulation for the proposed Epi-JTE. In addition, the effect was validated by experiment of fabricated SiC device with the Single-Zone-Epi-JTE. As a result, it has blocking capability of 79.4% compared to ideal parallel-plane junction breakdown.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.439-445
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.439
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Doohyung CHO
Electronics and Telecommunications Research Institute
Kunsik PARK
Electronics and Telecommunications Research Institute
Jongil WON
Electronics and Telecommunications Research Institute
Sanggi KIM
Electronics and Telecommunications Research Institute
Kwansgsoo KIM
Sogang University
Keyword
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Doohyung CHO, Kunsik PARK, Jongil WON, Sanggi KIM, Kwansgsoo KIM, "Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 439-445, May 2017, doi: 10.1587/transele.E100.C.439.
Abstract: In this paper, Epitaxial (Epi) Junction Termination Extension (JTE) technique for silicon carbide (SiC) power device is presented. Unlike conventional JTE, the Epi-JTE doesn't require high temperature (about 500°C) implantation process. Thus, it doesn't require high temperature (about 1700°C) process for implanted dose activation and surface defect curing. Therefore, the manufacturing cost will be decreased. Also, the fabrication process is very simple because the dose of the JTE is controlled by epitaxy growth. The blocking characteristic is analyzed through 2D-simulation for the proposed Epi-JTE. In addition, the effect was validated by experiment of fabricated SiC device with the Single-Zone-Epi-JTE. As a result, it has blocking capability of 79.4% compared to ideal parallel-plane junction breakdown.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.439/_p
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@ARTICLE{e100-c_5_439,
author={Doohyung CHO, Kunsik PARK, Jongil WON, Sanggi KIM, Kwansgsoo KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices},
year={2017},
volume={E100-C},
number={5},
pages={439-445},
abstract={In this paper, Epitaxial (Epi) Junction Termination Extension (JTE) technique for silicon carbide (SiC) power device is presented. Unlike conventional JTE, the Epi-JTE doesn't require high temperature (about 500°C) implantation process. Thus, it doesn't require high temperature (about 1700°C) process for implanted dose activation and surface defect curing. Therefore, the manufacturing cost will be decreased. Also, the fabrication process is very simple because the dose of the JTE is controlled by epitaxy growth. The blocking characteristic is analyzed through 2D-simulation for the proposed Epi-JTE. In addition, the effect was validated by experiment of fabricated SiC device with the Single-Zone-Epi-JTE. As a result, it has blocking capability of 79.4% compared to ideal parallel-plane junction breakdown.},
keywords={},
doi={10.1587/transele.E100.C.439},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 439
EP - 445
AU - Doohyung CHO
AU - Kunsik PARK
AU - Jongil WON
AU - Sanggi KIM
AU - Kwansgsoo KIM
PY - 2017
DO - 10.1587/transele.E100.C.439
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - In this paper, Epitaxial (Epi) Junction Termination Extension (JTE) technique for silicon carbide (SiC) power device is presented. Unlike conventional JTE, the Epi-JTE doesn't require high temperature (about 500°C) implantation process. Thus, it doesn't require high temperature (about 1700°C) process for implanted dose activation and surface defect curing. Therefore, the manufacturing cost will be decreased. Also, the fabrication process is very simple because the dose of the JTE is controlled by epitaxy growth. The blocking characteristic is analyzed through 2D-simulation for the proposed Epi-JTE. In addition, the effect was validated by experiment of fabricated SiC device with the Single-Zone-Epi-JTE. As a result, it has blocking capability of 79.4% compared to ideal parallel-plane junction breakdown.
ER -
English
