IEICE TRANSACTIONS on Electronics
Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
Summary :
The performance of devices based on two dimensional (2D) materials is significantly affected upon prolonged exposure to atmosphere. We analyzed time based environmental degradation of electrical properties of HfS2 field effect transistors. Atmospheric entities like oxygen and moisture adversely affect the device surface and reduction in drain current is observed over period of 48 hours. Two corrective measures, namely, PMMA passivation and vacuum annealing, have been studied to address the diminution of current by contaminants. PMMA passivation prevents the device from environment and reduces the effect of Coulomb scattering. Improvement in current characteristics signifies the importance of dielectric passivation for 2D materials. On the other hand, vacuum annealing is useful in removing contaminants from the affected surface. In order to figure out optimum process conditions, properties have been studied at various annealing temperatures. The improvement in drain current level was observed upon vacuum annealing within optimum range of annealing temperature.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.453-457
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.453
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Vikrant UPADHYAYA
Tokyo Institute of Technology
Toru KANAZAWA
Tokyo Institute of Technology
Yasuyuki MIYAMOTO
Tokyo Institute of Technology
Keyword
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Vikrant UPADHYAYA, Toru KANAZAWA, Yasuyuki MIYAMOTO, "Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 453-457, May 2017, doi: 10.1587/transele.E100.C.453.
Abstract: The performance of devices based on two dimensional (2D) materials is significantly affected upon prolonged exposure to atmosphere. We analyzed time based environmental degradation of electrical properties of HfS2 field effect transistors. Atmospheric entities like oxygen and moisture adversely affect the device surface and reduction in drain current is observed over period of 48 hours. Two corrective measures, namely, PMMA passivation and vacuum annealing, have been studied to address the diminution of current by contaminants. PMMA passivation prevents the device from environment and reduces the effect of Coulomb scattering. Improvement in current characteristics signifies the importance of dielectric passivation for 2D materials. On the other hand, vacuum annealing is useful in removing contaminants from the affected surface. In order to figure out optimum process conditions, properties have been studied at various annealing temperatures. The improvement in drain current level was observed upon vacuum annealing within optimum range of annealing temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.453/_p
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@ARTICLE{e100-c_5_453,
author={Vikrant UPADHYAYA, Toru KANAZAWA, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
year={2017},
volume={E100-C},
number={5},
pages={453-457},
abstract={The performance of devices based on two dimensional (2D) materials is significantly affected upon prolonged exposure to atmosphere. We analyzed time based environmental degradation of electrical properties of HfS2 field effect transistors. Atmospheric entities like oxygen and moisture adversely affect the device surface and reduction in drain current is observed over period of 48 hours. Two corrective measures, namely, PMMA passivation and vacuum annealing, have been studied to address the diminution of current by contaminants. PMMA passivation prevents the device from environment and reduces the effect of Coulomb scattering. Improvement in current characteristics signifies the importance of dielectric passivation for 2D materials. On the other hand, vacuum annealing is useful in removing contaminants from the affected surface. In order to figure out optimum process conditions, properties have been studied at various annealing temperatures. The improvement in drain current level was observed upon vacuum annealing within optimum range of annealing temperature.},
keywords={},
doi={10.1587/transele.E100.C.453},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
T2 - IEICE TRANSACTIONS on Electronics
SP - 453
EP - 457
AU - Vikrant UPADHYAYA
AU - Toru KANAZAWA
AU - Yasuyuki MIYAMOTO
PY - 2017
DO - 10.1587/transele.E100.C.453
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - The performance of devices based on two dimensional (2D) materials is significantly affected upon prolonged exposure to atmosphere. We analyzed time based environmental degradation of electrical properties of HfS2 field effect transistors. Atmospheric entities like oxygen and moisture adversely affect the device surface and reduction in drain current is observed over period of 48 hours. Two corrective measures, namely, PMMA passivation and vacuum annealing, have been studied to address the diminution of current by contaminants. PMMA passivation prevents the device from environment and reduces the effect of Coulomb scattering. Improvement in current characteristics signifies the importance of dielectric passivation for 2D materials. On the other hand, vacuum annealing is useful in removing contaminants from the affected surface. In order to figure out optimum process conditions, properties have been studied at various annealing temperatures. The improvement in drain current level was observed upon vacuum annealing within optimum range of annealing temperature.
ER -
English
