IEICE TRANSACTIONS on Electronics
A Low-Power Radiation-Hardened Flip-Flop with Stacked Transistors in a 65 nm FDSOI Process
Summary :
We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.4 pp.273-280
- Publication Date
- 2018/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.273
- Type of Manuscript
- Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
- Category
Authors
Haruki MARUOKA
Kyoto Institute of Technology
Masashi HIFUMI
Kyoto Institute of Technology
Jun FURUTA
Kyoto Institute of Technology
Kazutoshi KOBAYASHI
Kyoto Institute of Technology
Keyword
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Haruki MARUOKA, Masashi HIFUMI, Jun FURUTA, Kazutoshi KOBAYASHI, "A Low-Power Radiation-Hardened Flip-Flop with Stacked Transistors in a 65 nm FDSOI Process" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 4, pp. 273-280, April 2018, doi: 10.1587/transele.E101.C.273.
Abstract: We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.273/_p
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@ARTICLE{e101-c_4_273,
author={Haruki MARUOKA, Masashi HIFUMI, Jun FURUTA, Kazutoshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Power Radiation-Hardened Flip-Flop with Stacked Transistors in a 65 nm FDSOI Process},
year={2018},
volume={E101-C},
number={4},
pages={273-280},
abstract={We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.},
keywords={},
doi={10.1587/transele.E101.C.273},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - A Low-Power Radiation-Hardened Flip-Flop with Stacked Transistors in a 65 nm FDSOI Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 273
EP - 280
AU - Haruki MARUOKA
AU - Masashi HIFUMI
AU - Jun FURUTA
AU - Kazutoshi KOBAYASHI
PY - 2018
DO - 10.1587/transele.E101.C.273
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2018
AB - We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.
ER -
English
