IEICE TRANSACTIONS on Electronics
Type-II HfS2/MoS2 Heterojunction Transistors
Summary :
We experimentally demonstrate transistor operation in a vertical p+-MoS2/n-HfS2 van der Waals (vdW) heterostructure configuration for the first time. The HfS2/MoS2 heterojunction transistor exhibits an ON/OFF ratio of 104 and a maximum drain current of 20 nA. These values are comparable with the corresponding reported values for vdW heterojunction TFETs. Moreover, we study the effect of atmospheric exposure on the subthreshold slope (SS) of the HfS2/MoS2 transistor. Unpassivated and passivated devices are compared in terms of their SS values and IDS-VGS hysteresis. While the unpassivated HfS2/MoS2 heterojunction transistor exhibits a minimum SS value of 2000 mV/dec, the same device passivated with a 20-nm-thick HfO2 film exhibits a significantly lower SS value of 700 mV/dec. HfO2 passivation protects the device from contamination caused by atmospheric moisture and oxygen and also reduces the effect of surface traps. We believe that our findings will contribute to the practical realization of HfS2-based vdW heterojunction TFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.5 pp.338-342
- Publication Date
- 2018/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.338
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Seiko NETSU
Tokyo Institute of Technology
Toru KANAZAWA
Tokyo Institute of Technology
Teerayut UWANNO
The University of Tokyo
Tomohiro AMEMIYA
Tokyo Institute of Technology
Kosuke NAGASHIO
The University of Tokyo
Yasuyuki MIYAMOTO
Tokyo Institute of Technology
Keyword
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Seiko NETSU, Toru KANAZAWA, Teerayut UWANNO, Tomohiro AMEMIYA, Kosuke NAGASHIO, Yasuyuki MIYAMOTO, "Type-II HfS2/MoS2 Heterojunction Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 5, pp. 338-342, May 2018, doi: 10.1587/transele.E101.C.338.
Abstract: We experimentally demonstrate transistor operation in a vertical p+-MoS2/n-HfS2 van der Waals (vdW) heterostructure configuration for the first time. The HfS2/MoS2 heterojunction transistor exhibits an ON/OFF ratio of 104 and a maximum drain current of 20 nA. These values are comparable with the corresponding reported values for vdW heterojunction TFETs. Moreover, we study the effect of atmospheric exposure on the subthreshold slope (SS) of the HfS2/MoS2 transistor. Unpassivated and passivated devices are compared in terms of their SS values and IDS-VGS hysteresis. While the unpassivated HfS2/MoS2 heterojunction transistor exhibits a minimum SS value of 2000 mV/dec, the same device passivated with a 20-nm-thick HfO2 film exhibits a significantly lower SS value of 700 mV/dec. HfO2 passivation protects the device from contamination caused by atmospheric moisture and oxygen and also reduces the effect of surface traps. We believe that our findings will contribute to the practical realization of HfS2-based vdW heterojunction TFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.338/_p
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@ARTICLE{e101-c_5_338,
author={Seiko NETSU, Toru KANAZAWA, Teerayut UWANNO, Tomohiro AMEMIYA, Kosuke NAGASHIO, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Type-II HfS2/MoS2 Heterojunction Transistors},
year={2018},
volume={E101-C},
number={5},
pages={338-342},
abstract={We experimentally demonstrate transistor operation in a vertical p+-MoS2/n-HfS2 van der Waals (vdW) heterostructure configuration for the first time. The HfS2/MoS2 heterojunction transistor exhibits an ON/OFF ratio of 104 and a maximum drain current of 20 nA. These values are comparable with the corresponding reported values for vdW heterojunction TFETs. Moreover, we study the effect of atmospheric exposure on the subthreshold slope (SS) of the HfS2/MoS2 transistor. Unpassivated and passivated devices are compared in terms of their SS values and IDS-VGS hysteresis. While the unpassivated HfS2/MoS2 heterojunction transistor exhibits a minimum SS value of 2000 mV/dec, the same device passivated with a 20-nm-thick HfO2 film exhibits a significantly lower SS value of 700 mV/dec. HfO2 passivation protects the device from contamination caused by atmospheric moisture and oxygen and also reduces the effect of surface traps. We believe that our findings will contribute to the practical realization of HfS2-based vdW heterojunction TFETs.},
keywords={},
doi={10.1587/transele.E101.C.338},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Type-II HfS2/MoS2 Heterojunction Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 338
EP - 342
AU - Seiko NETSU
AU - Toru KANAZAWA
AU - Teerayut UWANNO
AU - Tomohiro AMEMIYA
AU - Kosuke NAGASHIO
AU - Yasuyuki MIYAMOTO
PY - 2018
DO - 10.1587/transele.E101.C.338
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - We experimentally demonstrate transistor operation in a vertical p+-MoS2/n-HfS2 van der Waals (vdW) heterostructure configuration for the first time. The HfS2/MoS2 heterojunction transistor exhibits an ON/OFF ratio of 104 and a maximum drain current of 20 nA. These values are comparable with the corresponding reported values for vdW heterojunction TFETs. Moreover, we study the effect of atmospheric exposure on the subthreshold slope (SS) of the HfS2/MoS2 transistor. Unpassivated and passivated devices are compared in terms of their SS values and IDS-VGS hysteresis. While the unpassivated HfS2/MoS2 heterojunction transistor exhibits a minimum SS value of 2000 mV/dec, the same device passivated with a 20-nm-thick HfO2 film exhibits a significantly lower SS value of 700 mV/dec. HfO2 passivation protects the device from contamination caused by atmospheric moisture and oxygen and also reduces the effect of surface traps. We believe that our findings will contribute to the practical realization of HfS2-based vdW heterojunction TFETs.
ER -
English
