Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

Ryo NAKAO; Masakazu ARAI; Takaaki KAKITSUKA; Shinji MATSUO

doi:10.1587/transele.E101.C.537

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Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

Ryo NAKAO, Masakazu ARAI, Takaaki KAKITSUKA, Shinji MATSUO

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Summary :

We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.7 pp.537-544

Publication Date: 2018/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.537

Type of Manuscript: Special Section INVITED PAPER (Special Section on Distinguished Papers in Photonics)

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Authors

Ryo NAKAO
  NTT Corporation
Masakazu ARAI
  NTT Corporation
Takaaki KAKITSUKA
  NTT Corporation
Shinji MATSUO
  NTT Corporation

Keyword

heteroepitaxial growth, Ge buffer, MOVPE, Si substrate

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Ryo NAKAO, Masakazu ARAI, Takaaki KAKITSUKA, Shinji MATSUO, "Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 7, pp. 537-544, July 2018, doi: 10.1587/transele.E101.C.537.
Abstract: We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.537/_p

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@ARTICLE{e101-c_7_537,
author={Ryo NAKAO, Masakazu ARAI, Takaaki KAKITSUKA, Shinji MATSUO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers},
year={2018},
volume={E101-C},
number={7},
pages={537-544},
abstract={We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.},
keywords={},
doi={10.1587/transele.E101.C.537},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 537
EP - 544
AU - Ryo NAKAO
AU - Masakazu ARAI
AU - Takaaki KAKITSUKA
AU - Shinji MATSUO
PY - 2018
DO - 10.1587/transele.E101.C.537
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2018
AB - We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.
ER -