4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
Summary :
A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.10 pp.751-758
- Publication Date
- 2018/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.751
- Type of Manuscript
- Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
- Category
Authors
Kazuki MASHIMO
University of Electro-Communications
Ryo ISHIKAWA
University of Electro-Communications
Kazuhiko HONJO
University of Electro-Communications
Keyword
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Kazuki MASHIMO, Ryo ISHIKAWA, Kazuhiko HONJO, "4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 10, pp. 751-758, October 2018, doi: 10.1587/transele.E101.C.751.
Abstract: A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.751/_p
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@ARTICLE{e101-c_10_751,
author={Kazuki MASHIMO, Ryo ISHIKAWA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching},
year={2018},
volume={E101-C},
number={10},
pages={751-758},
abstract={A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition.},
keywords={},
doi={10.1587/transele.E101.C.751},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
T2 - IEICE TRANSACTIONS on Electronics
SP - 751
EP - 758
AU - Kazuki MASHIMO
AU - Ryo ISHIKAWA
AU - Kazuhiko HONJO
PY - 2018
DO - 10.1587/transele.E101.C.751
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2018
AB - A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition.
ER -
English
