A 0.18 µm Stability-Enhanced CMOS LDO with Robust Compensation Scheme
Summary :
A 0.18 µm 1.5 V/50 mA stability-enhanced low dropout regulator (LDO) is presented. A multi-path error amplifier and a split pass device structure are utilized for pole-zero pair compensation. The proposed LDO can be stable without a load capacitor and also stable with different combinations of load capacitors and equivalent series resistance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.8 pp.1080-1086
- Publication Date
- 2009/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.1080
- Type of Manuscript
- PAPER
- Category
- Electronic Circuits
Authors
Keyword
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Hsuan-I PAN, Chern-Lin CHEN, "A 0.18 µm Stability-Enhanced CMOS LDO with Robust Compensation Scheme" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 8, pp. 1080-1086, August 2009, doi: 10.1587/transele.E92.C.1080.
Abstract: A 0.18 µm 1.5 V/50 mA stability-enhanced low dropout regulator (LDO) is presented. A multi-path error amplifier and a split pass device structure are utilized for pole-zero pair compensation. The proposed LDO can be stable without a load capacitor and also stable with different combinations of load capacitors and equivalent series resistance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1080/_p
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@ARTICLE{e92-c_8_1080,
author={Hsuan-I PAN, Chern-Lin CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.18 µm Stability-Enhanced CMOS LDO with Robust Compensation Scheme},
year={2009},
volume={E92-C},
number={8},
pages={1080-1086},
abstract={A 0.18 µm 1.5 V/50 mA stability-enhanced low dropout regulator (LDO) is presented. A multi-path error amplifier and a split pass device structure are utilized for pole-zero pair compensation. The proposed LDO can be stable without a load capacitor and also stable with different combinations of load capacitors and equivalent series resistance.},
keywords={},
doi={10.1587/transele.E92.C.1080},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - A 0.18 µm Stability-Enhanced CMOS LDO with Robust Compensation Scheme
T2 - IEICE TRANSACTIONS on Electronics
SP - 1080
EP - 1086
AU - Hsuan-I PAN
AU - Chern-Lin CHEN
PY - 2009
DO - 10.1587/transele.E92.C.1080
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2009
AB - A 0.18 µm 1.5 V/50 mA stability-enhanced low dropout regulator (LDO) is presented. A multi-path error amplifier and a split pass device structure are utilized for pole-zero pair compensation. The proposed LDO can be stable without a load capacitor and also stable with different combinations of load capacitors and equivalent series resistance.
ER -
English
