Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
Summary :
Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm-2eV-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.12 pp.1470-1474
- Publication Date
- 2009/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.1470
- Type of Manuscript
- Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
- Category
- Fundamentals for Nanodevices
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Kiichi KAMIMURA, Hiroaki SHIOZAWA, Tomohiko YAMAKAMI, Rinpei HAYASHIBE, "Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1470-1474, December 2009, doi: 10.1587/transele.E92.C.1470.
Abstract: Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm-2eV-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1470/_p
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@ARTICLE{e92-c_12_1470,
author={Kiichi KAMIMURA, Hiroaki SHIOZAWA, Tomohiko YAMAKAMI, Rinpei HAYASHIBE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode},
year={2009},
volume={E92-C},
number={12},
pages={1470-1474},
abstract={Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm-2eV-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.},
keywords={},
doi={10.1587/transele.E92.C.1470},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
T2 - IEICE TRANSACTIONS on Electronics
SP - 1470
EP - 1474
AU - Kiichi KAMIMURA
AU - Hiroaki SHIOZAWA
AU - Tomohiko YAMAKAMI
AU - Rinpei HAYASHIBE
PY - 2009
DO - 10.1587/transele.E92.C.1470
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm-2eV-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.
ER -
English
