Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

Kazuhiro SHIMANOE; Katsunori MAKIHARA; Mitsuhisa IKEDA; Seiichi MIYAZAKI

doi:10.1587/transele.E92.C.616

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

Kazuhiro SHIMANOE, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI

Full Text Views

0

Cite this

Summary :

We have studied the formation of Pd-nanodots on SiO₂ from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H₂ plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from 3.4 to 6.510¹¹ cm^{- 2} while the dot size distribution was changed from 7 to 1.5 in average dot height with 40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate.

Publication: IEICE TRANSACTIONS on Electronics Vol.E92-C No.5 pp.616-619

Publication Date: 2009/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E92.C.616

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category

Cite this

Copy

Kazuhiro SHIMANOE, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, "Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories" in IEICE TRANSACTIONS on Electronics, vol. E92-C, no. 5, pp. 616-619, May 2009, doi: 10.1587/transele.E92.C.616.
Abstract: We have studied the formation of Pd-nanodots on SiO₂ from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H₂ plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from 3.4 to 6.510¹¹ cm^{- 2} while the dot size distribution was changed from 7 to 1.5 in average dot height with 40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.616/_p

Copy

@ARTICLE{e92-c_5_616,
author={Kazuhiro SHIMANOE, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories},
year={2009},
volume={E92-C},
number={5},
pages={616-619},
abstract={We have studied the formation of Pd-nanodots on SiO₂ from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H₂ plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from 3.4 to 6.510¹¹ cm^{- 2} while the dot size distribution was changed from 7 to 1.5 in average dot height with 40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate.},
keywords={},
doi={10.1587/transele.E92.C.616},
ISSN={1745-1353},
month={May},}

Copy

TY - JOUR
TI - Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 616
EP - 619
AU - Kazuhiro SHIMANOE
AU - Katsunori MAKIHARA
AU - Mitsuhisa IKEDA
AU - Seiichi MIYAZAKI
PY - 2009
DO - 10.1587/transele.E92.C.616
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - We have studied the formation of Pd-nanodots on SiO₂ from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H₂ plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from 3.4 to 6.510¹¹ cm^{- 2} while the dot size distribution was changed from 7 to 1.5 in average dot height with 40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate.
ER -