A decoupling device that can be used for millimeter-waves is required to reduce the effect of the parasitic impedance at the grounded terminal of the power supply. The frequently used decoupling capacitor is not appropriate because it has self-resonance characteristics due to the parasitic inductance. To realize resonance-free wideband decoupling, a high-attenuation power line (HAPL) is proposed. The HAPL has constant input impedance equal to its characteristic impedance, and has constant isolation unaffected by the phase constant and the terminal impedance. Furthermore, the HAPL contributes to the area reduction of the millimeter-wave circuits because it simultaneously acts as a power line and a decoupling device. The HAPL was fabricated with a 90 nm CMOS process. The proposed structure increases parallel conductance and capacitance using an MOS capacitor and its equivalent series resistance, therefore realizing high attenuation and resonance suppression while reducing characteristic impedance. With a 200-µm-long HAPL, Re (S11) was less than -0.9 and isolation was more than 25 dB, from 50 GHz to 90 GHz including unlicensed bands used for wireless personal area network and radar application. As a result, power-supply network with wideband decoupling is realized by simply connecting power-supply pads and feeding point via the HAPL. The HAPL is expected to contribute to the simple and compact design of millimeter-wave circuits.
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Yasuo MANZAWA, Masato SASAKI, Minoru FUJISHIMA, "High-Attenuation Power Line for Wideband Decoupling" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 6, pp. 792-797, June 2009, doi: 10.1587/transele.E92.C.792.
Abstract: A decoupling device that can be used for millimeter-waves is required to reduce the effect of the parasitic impedance at the grounded terminal of the power supply. The frequently used decoupling capacitor is not appropriate because it has self-resonance characteristics due to the parasitic inductance. To realize resonance-free wideband decoupling, a high-attenuation power line (HAPL) is proposed. The HAPL has constant input impedance equal to its characteristic impedance, and has constant isolation unaffected by the phase constant and the terminal impedance. Furthermore, the HAPL contributes to the area reduction of the millimeter-wave circuits because it simultaneously acts as a power line and a decoupling device. The HAPL was fabricated with a 90 nm CMOS process. The proposed structure increases parallel conductance and capacitance using an MOS capacitor and its equivalent series resistance, therefore realizing high attenuation and resonance suppression while reducing characteristic impedance. With a 200-µm-long HAPL, Re (S11) was less than -0.9 and isolation was more than 25 dB, from 50 GHz to 90 GHz including unlicensed bands used for wireless personal area network and radar application. As a result, power-supply network with wideband decoupling is realized by simply connecting power-supply pads and feeding point via the HAPL. The HAPL is expected to contribute to the simple and compact design of millimeter-wave circuits.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.792/_p
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@ARTICLE{e92-c_6_792,
author={Yasuo MANZAWA, Masato SASAKI, Minoru FUJISHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Attenuation Power Line for Wideband Decoupling},
year={2009},
volume={E92-C},
number={6},
pages={792-797},
abstract={A decoupling device that can be used for millimeter-waves is required to reduce the effect of the parasitic impedance at the grounded terminal of the power supply. The frequently used decoupling capacitor is not appropriate because it has self-resonance characteristics due to the parasitic inductance. To realize resonance-free wideband decoupling, a high-attenuation power line (HAPL) is proposed. The HAPL has constant input impedance equal to its characteristic impedance, and has constant isolation unaffected by the phase constant and the terminal impedance. Furthermore, the HAPL contributes to the area reduction of the millimeter-wave circuits because it simultaneously acts as a power line and a decoupling device. The HAPL was fabricated with a 90 nm CMOS process. The proposed structure increases parallel conductance and capacitance using an MOS capacitor and its equivalent series resistance, therefore realizing high attenuation and resonance suppression while reducing characteristic impedance. With a 200-µm-long HAPL, Re (S11) was less than -0.9 and isolation was more than 25 dB, from 50 GHz to 90 GHz including unlicensed bands used for wireless personal area network and radar application. As a result, power-supply network with wideband decoupling is realized by simply connecting power-supply pads and feeding point via the HAPL. The HAPL is expected to contribute to the simple and compact design of millimeter-wave circuits.},
keywords={},
doi={10.1587/transele.E92.C.792},
ISSN={1745-1353},
month={June},}
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TY - JOUR
TI - High-Attenuation Power Line for Wideband Decoupling
T2 - IEICE TRANSACTIONS on Electronics
SP - 792
EP - 797
AU - Yasuo MANZAWA
AU - Masato SASAKI
AU - Minoru FUJISHIMA
PY - 2009
DO - 10.1587/transele.E92.C.792
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2009
AB - A decoupling device that can be used for millimeter-waves is required to reduce the effect of the parasitic impedance at the grounded terminal of the power supply. The frequently used decoupling capacitor is not appropriate because it has self-resonance characteristics due to the parasitic inductance. To realize resonance-free wideband decoupling, a high-attenuation power line (HAPL) is proposed. The HAPL has constant input impedance equal to its characteristic impedance, and has constant isolation unaffected by the phase constant and the terminal impedance. Furthermore, the HAPL contributes to the area reduction of the millimeter-wave circuits because it simultaneously acts as a power line and a decoupling device. The HAPL was fabricated with a 90 nm CMOS process. The proposed structure increases parallel conductance and capacitance using an MOS capacitor and its equivalent series resistance, therefore realizing high attenuation and resonance suppression while reducing characteristic impedance. With a 200-µm-long HAPL, Re (S11) was less than -0.9 and isolation was more than 25 dB, from 50 GHz to 90 GHz including unlicensed bands used for wireless personal area network and radar application. As a result, power-supply network with wideband decoupling is realized by simply connecting power-supply pads and feeding point via the HAPL. The HAPL is expected to contribute to the simple and compact design of millimeter-wave circuits.
ER -