IEICE TRANSACTIONS on Electronics
InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
Summary :
A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1309-1314
- Publication Date
- 2010/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1309
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
- Category
- III-V Heterostructure Devices
Authors
Werner PROST
Dudu ZHANG
Benjamin MUNSTERMANN
Tobias FELDENGUT
Ralf GEITMANN
Artur POLOCZEK
Franz-Josef TEGUDE
Keyword
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Werner PROST, Dudu ZHANG, Benjamin MUNSTERMANN, Tobias FELDENGUT, Ralf GEITMANN, Artur POLOCZEK, Franz-Josef TEGUDE, "InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1309-1314, August 2010, doi: 10.1587/transele.E93.C.1309.
Abstract: A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1309/_p
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@ARTICLE{e93-c_8_1309,
author={Werner PROST, Dudu ZHANG, Benjamin MUNSTERMANN, Tobias FELDENGUT, Ralf GEITMANN, Artur POLOCZEK, Franz-Josef TEGUDE, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification},
year={2010},
volume={E93-C},
number={8},
pages={1309-1314},
abstract={A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.},
keywords={},
doi={10.1587/transele.E93.C.1309},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
T2 - IEICE TRANSACTIONS on Electronics
SP - 1309
EP - 1314
AU - Werner PROST
AU - Dudu ZHANG
AU - Benjamin MUNSTERMANN
AU - Tobias FELDENGUT
AU - Ralf GEITMANN
AU - Artur POLOCZEK
AU - Franz-Josef TEGUDE
PY - 2010
DO - 10.1587/transele.E93.C.1309
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.
ER -
English
