Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)
Summary :
Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.10 pp.1499-1503
- Publication Date
- 2010/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1499
- Type of Manuscript
- Special Section PAPER (Special Section on Frontier of Thin-Film Transistor Technology)
- Category
Authors
Keyword
BLDA, ELA, SPC, TFT, thermal analysis
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Katsuya SHIRAI, Takashi NOGUCHI, Yoshiaki OGINO, Eiji SAHOTA, "Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1499-1503, October 2010, doi: 10.1587/transele.E93.C.1499.
Abstract: Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1499/_p
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@ARTICLE{e93-c_10_1499,
author={Katsuya SHIRAI, Takashi NOGUCHI, Yoshiaki OGINO, Eiji SAHOTA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)},
year={2010},
volume={E93-C},
number={10},
pages={1499-1503},
abstract={Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.},
keywords={},
doi={10.1587/transele.E93.C.1499},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1499
EP - 1503
AU - Katsuya SHIRAI
AU - Takashi NOGUCHI
AU - Yoshiaki OGINO
AU - Eiji SAHOTA
PY - 2010
DO - 10.1587/transele.E93.C.1499
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
ER -
English
