Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
Summary :
The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.1 pp.151-153
- Publication Date
- 2010/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.151
- Type of Manuscript
- LETTER
- Category
- Electronic Displays
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Keyword
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Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, "Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 1, pp. 151-153, January 2010, doi: 10.1587/transele.E93.C.151.
Abstract: The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.151/_p
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@ARTICLE{e93-c_1_151,
author={Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness},
year={2010},
volume={E93-C},
number={1},
pages={151-153},
abstract={The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.},
keywords={},
doi={10.1587/transele.E93.C.151},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
T2 - IEICE TRANSACTIONS on Electronics
SP - 151
EP - 153
AU - Ching-Lin FAN
AU - Yi-Yan LIN
AU - Yan-Hang YANG
AU - Hung-Che CHEN
PY - 2010
DO - 10.1587/transele.E93.C.151
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2010
AB - The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
ER -
English
