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A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.4 pp.514-520

- Publication Date
- 2010/04/01

- Publicized

- Online ISSN
- 1745-1353

- DOI
- 10.1587/transele.E93.C.514

- Type of Manuscript
- PAPER

- Category
- Electronic Circuits

The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.

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Kwang-Jow GAN, Dong-Shong LIANG, "Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 4, pp. 514-520, April 2010, doi: 10.1587/transele.E93.C.514.

Abstract: A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.514/_p

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@ARTICLE{e93-c_4_514,

author={Kwang-Jow GAN, Dong-Shong LIANG, },

journal={IEICE TRANSACTIONS on Electronics},

title={Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit},

year={2010},

volume={E93-C},

number={4},

pages={514-520},

abstract={A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.},

keywords={},

doi={10.1587/transele.E93.C.514},

ISSN={1745-1353},

month={April},}

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TY - JOUR

TI - Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit

T2 - IEICE TRANSACTIONS on Electronics

SP - 514

EP - 520

AU - Kwang-Jow GAN

AU - Dong-Shong LIANG

PY - 2010

DO - 10.1587/transele.E93.C.514

JO - IEICE TRANSACTIONS on Electronics

SN - 1745-1353

VL - E93-C

IS - 4

JA - IEICE TRANSACTIONS on Electronics

Y1 - April 2010

AB - A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.

ER -