Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness

Masanobu HIROKI; Narihiko MAEDA; Naoteru SHIGEKAWA

doi:10.1587/transele.E93.C.579

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness

Masanobu HIROKI, Narihiko MAEDA, Naoteru SHIGEKAWA

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We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 nm. The highest electron mobility of 1470 cm²/VS is obtained for a 0.75-nm-thick AlN interlayer. The mobility, however, becomes lower with increasing deviation from 0.75 nm. It is only 200 cm²/VS for the 0-nm thick AlN. Inserting AlGaN between AlN and InAlN suppresses the influence of the AlN interlayer thickness. A smooth surface with rms roughness of 0.35 nm is obtained for all samples with 0-1.5-nm-thick AlN. The electron mobility ranges from 1000 to 1690 cm²/VS. The variation is smaller than that for InAlN/GaN. We fabricated field effect transistors (FETs) with gate length of 2 µm. The electron mobility in the access region affects the transconductance (g_m) of FETs. As a results, the influence of the AlN thickness for InAlN/GaN FETs is larger than that for InAlN/AlGaN/GaN FETs, which reduces gate leakage current. The transconductance varies from 93 to 235 mS/mm for InAlN/GaN FETs. In contrast, it varies from 180 to 230 mS/mm for InAlN/AlGaN/GaN FETs. These results indicate that the InAlN/AlGaN/GaN heterostructures could lead to the development of GaN-based FETs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.579-584

Publication Date: 2010/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E93.C.579

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Compound Semiconductor Devices

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Masanobu HIROKI, Narihiko MAEDA, Naoteru SHIGEKAWA, "Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness" in IEICE TRANSACTIONS on Electronics, vol. E93-C, no. 5, pp. 579-584, May 2010, doi: 10.1587/transele.E93.C.579.
Abstract: We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 nm. The highest electron mobility of 1470 cm²/VS is obtained for a 0.75-nm-thick AlN interlayer. The mobility, however, becomes lower with increasing deviation from 0.75 nm. It is only 200 cm²/VS for the 0-nm thick AlN. Inserting AlGaN between AlN and InAlN suppresses the influence of the AlN interlayer thickness. A smooth surface with rms roughness of 0.35 nm is obtained for all samples with 0-1.5-nm-thick AlN. The electron mobility ranges from 1000 to 1690 cm²/VS. The variation is smaller than that for InAlN/GaN. We fabricated field effect transistors (FETs) with gate length of 2 µm. The electron mobility in the access region affects the transconductance (g_m) of FETs. As a results, the influence of the AlN thickness for InAlN/GaN FETs is larger than that for InAlN/AlGaN/GaN FETs, which reduces gate leakage current. The transconductance varies from 93 to 235 mS/mm for InAlN/GaN FETs. In contrast, it varies from 180 to 230 mS/mm for InAlN/AlGaN/GaN FETs. These results indicate that the InAlN/AlGaN/GaN heterostructures could lead to the development of GaN-based FETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.579/_p

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@ARTICLE{e93-c_5_579,
author={Masanobu HIROKI, Narihiko MAEDA, Naoteru SHIGEKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness},
year={2010},
volume={E93-C},
number={5},
pages={579-584},
abstract={We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 nm. The highest electron mobility of 1470 cm²/VS is obtained for a 0.75-nm-thick AlN interlayer. The mobility, however, becomes lower with increasing deviation from 0.75 nm. It is only 200 cm²/VS for the 0-nm thick AlN. Inserting AlGaN between AlN and InAlN suppresses the influence of the AlN interlayer thickness. A smooth surface with rms roughness of 0.35 nm is obtained for all samples with 0-1.5-nm-thick AlN. The electron mobility ranges from 1000 to 1690 cm²/VS. The variation is smaller than that for InAlN/GaN. We fabricated field effect transistors (FETs) with gate length of 2 µm. The electron mobility in the access region affects the transconductance (g_m) of FETs. As a results, the influence of the AlN thickness for InAlN/GaN FETs is larger than that for InAlN/AlGaN/GaN FETs, which reduces gate leakage current. The transconductance varies from 93 to 235 mS/mm for InAlN/GaN FETs. In contrast, it varies from 180 to 230 mS/mm for InAlN/AlGaN/GaN FETs. These results indicate that the InAlN/AlGaN/GaN heterostructures could lead to the development of GaN-based FETs.},
keywords={},
doi={10.1587/transele.E93.C.579},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
T2 - IEICE TRANSACTIONS on Electronics
SP - 579
EP - 584
AU - Masanobu HIROKI
AU - Narihiko MAEDA
AU - Naoteru SHIGEKAWA
PY - 2010
DO - 10.1587/transele.E93.C.579
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 nm. The highest electron mobility of 1470 cm²/VS is obtained for a 0.75-nm-thick AlN interlayer. The mobility, however, becomes lower with increasing deviation from 0.75 nm. It is only 200 cm²/VS for the 0-nm thick AlN. Inserting AlGaN between AlN and InAlN suppresses the influence of the AlN interlayer thickness. A smooth surface with rms roughness of 0.35 nm is obtained for all samples with 0-1.5-nm-thick AlN. The electron mobility ranges from 1000 to 1690 cm²/VS. The variation is smaller than that for InAlN/GaN. We fabricated field effect transistors (FETs) with gate length of 2 µm. The electron mobility in the access region affects the transconductance (g_m) of FETs. As a results, the influence of the AlN thickness for InAlN/GaN FETs is larger than that for InAlN/AlGaN/GaN FETs, which reduces gate leakage current. The transconductance varies from 93 to 235 mS/mm for InAlN/GaN FETs. In contrast, it varies from 180 to 230 mS/mm for InAlN/AlGaN/GaN FETs. These results indicate that the InAlN/AlGaN/GaN heterostructures could lead to the development of GaN-based FETs.
ER -