IEICE TRANSACTIONS on Electronics
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Summary :
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/ 1-poly Gate 0.14 µm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.608-613
- Publication Date
- 2010/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.608
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Flash/Advanced Memory
Authors
Fumitaka IGA
Masashi KAMIYANAGI
Shoji IKEDA
Katsuya MIURA
Jun HAYAKAWA
Haruhiro HASEGAWA
Takahiro HANYU
Hideo OHNO
Tetsuo ENDOH
Keyword
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Fumitaka IGA, Masashi KAMIYANAGI, Shoji IKEDA, Katsuya MIURA, Jun HAYAKAWA, Haruhiro HASEGAWA, Takahiro HANYU, Hideo OHNO, Tetsuo ENDOH, "Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 608-613, May 2010, doi: 10.1587/transele.E93.C.608.
Abstract: In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/ 1-poly Gate 0.14 µm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.608/_p
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@ARTICLE{e93-c_5_608,
author={Fumitaka IGA, Masashi KAMIYANAGI, Shoji IKEDA, Katsuya MIURA, Jun HAYAKAWA, Haruhiro HASEGAWA, Takahiro HANYU, Hideo OHNO, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits},
year={2010},
volume={E93-C},
number={5},
pages={608-613},
abstract={In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/ 1-poly Gate 0.14 µm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60
keywords={},
doi={10.1587/transele.E93.C.608},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 608
EP - 613
AU - Fumitaka IGA
AU - Masashi KAMIYANAGI
AU - Shoji IKEDA
AU - Katsuya MIURA
AU - Jun HAYAKAWA
AU - Haruhiro HASEGAWA
AU - Takahiro HANYU
AU - Hideo OHNO
AU - Tetsuo ENDOH
PY - 2010
DO - 10.1587/transele.E93.C.608
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/ 1-poly Gate 0.14 µm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60
ER -
English
