A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology

Seungwoo SEO; Jae-Sung RIEH

doi:10.1587/transele.E93.C.614

A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology

Seungwoo SEO, Jae-Sung RIEH

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In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low DC power consumption has been developed in a commercial 0.13-µm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a small supply voltage of 0.5 V, leading to a DC power consumption of only 0.31 mW. To the authors' best knowledge, this is the lowest power consumption reported for mm-wave ILFDs at the point of writing. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0-1.2 V, the free-running oscillation frequency varied from 27.43 to 28.06 GHz. At 0 dBm input power, the frequency divider exhibited a locking range of 5.8 GHz from 53 to 58.8 GHz without external tuning mechanism. The fabricated circuit size is 0.72 mm 0.62 mm including the RF and DC supply pads.

Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.614-618

Publication Date: 2010/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E93.C.614

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Analog/RF Devices

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Seungwoo SEO, Jae-Sung RIEH, "A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology" in IEICE TRANSACTIONS on Electronics, vol. E93-C, no. 5, pp. 614-618, May 2010, doi: 10.1587/transele.E93.C.614.
Abstract: In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low DC power consumption has been developed in a commercial 0.13-µm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a small supply voltage of 0.5 V, leading to a DC power consumption of only 0.31 mW. To the authors' best knowledge, this is the lowest power consumption reported for mm-wave ILFDs at the point of writing. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0-1.2 V, the free-running oscillation frequency varied from 27.43 to 28.06 GHz. At 0 dBm input power, the frequency divider exhibited a locking range of 5.8 GHz from 53 to 58.8 GHz without external tuning mechanism. The fabricated circuit size is 0.72 mm 0.62 mm including the RF and DC supply pads.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.614/_p

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@ARTICLE{e93-c_5_614,
author={Seungwoo SEO, Jae-Sung RIEH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology},
year={2010},
volume={E93-C},
number={5},
pages={614-618},
abstract={In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low DC power consumption has been developed in a commercial 0.13-µm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a small supply voltage of 0.5 V, leading to a DC power consumption of only 0.31 mW. To the authors' best knowledge, this is the lowest power consumption reported for mm-wave ILFDs at the point of writing. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0-1.2 V, the free-running oscillation frequency varied from 27.43 to 28.06 GHz. At 0 dBm input power, the frequency divider exhibited a locking range of 5.8 GHz from 53 to 58.8 GHz without external tuning mechanism. The fabricated circuit size is 0.72 mm 0.62 mm including the RF and DC supply pads.},
keywords={},
doi={10.1587/transele.E93.C.614},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 614
EP - 618
AU - Seungwoo SEO
AU - Jae-Sung RIEH
PY - 2010
DO - 10.1587/transele.E93.C.614
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low DC power consumption has been developed in a commercial 0.13-µm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a small supply voltage of 0.5 V, leading to a DC power consumption of only 0.31 mW. To the authors' best knowledge, this is the lowest power consumption reported for mm-wave ILFDs at the point of writing. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0-1.2 V, the free-running oscillation frequency varied from 27.43 to 28.06 GHz. At 0 dBm input power, the frequency divider exhibited a locking range of 5.8 GHz from 53 to 58.8 GHz without external tuning mechanism. The fabricated circuit size is 0.72 mm 0.62 mm including the RF and DC supply pads.
ER -