4H-SiC Avalanche Photodiodes for 280 nm UV Detection
Summary :
We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.648-650
- Publication Date
- 2010/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.648
- Type of Manuscript
- BRIEF PAPER
- Category
- Compound Semiconductor Devices
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Ho-Young CHA, Hyuk-Kee SUNG, Hyungtak KIM, Chun-Hyung CHO, Peter M. SANDVIK, "4H-SiC Avalanche Photodiodes for 280 nm UV Detection" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 648-650, May 2010, doi: 10.1587/transele.E93.C.648.
Abstract: We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.648/_p
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@ARTICLE{e93-c_5_648,
author={Ho-Young CHA, Hyuk-Kee SUNG, Hyungtak KIM, Chun-Hyung CHO, Peter M. SANDVIK, },
journal={IEICE TRANSACTIONS on Electronics},
title={4H-SiC Avalanche Photodiodes for 280 nm UV Detection},
year={2010},
volume={E93-C},
number={5},
pages={648-650},
abstract={We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.},
keywords={},
doi={10.1587/transele.E93.C.648},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - 4H-SiC Avalanche Photodiodes for 280 nm UV Detection
T2 - IEICE TRANSACTIONS on Electronics
SP - 648
EP - 650
AU - Ho-Young CHA
AU - Hyuk-Kee SUNG
AU - Hyungtak KIM
AU - Chun-Hyung CHO
AU - Peter M. SANDVIK
PY - 2010
DO - 10.1587/transele.E93.C.648
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
ER -
English
