Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting <I>RC</I>-Ladder Circuit in Base Bias Circuit

Ryo ISHIKAWA; Junichi KIMURA; Yukio TAKAHASHI; Kazuhiko HONJO

doi:10.1587/transele.E93.C.958

Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit

Ryo ISHIKAWA, Junichi KIMURA, Yukio TAKAHASHI, Kazuhiko HONJO

Full Text Views

0

Cite this

Summary :

An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.

Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.7 pp.958-965

Publication Date: 2010/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E93.C.958

Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)

Category

Cite this

Copy

Ryo ISHIKAWA, Junichi KIMURA, Yukio TAKAHASHI, Kazuhiko HONJO, "Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit" in IEICE TRANSACTIONS on Electronics, vol. E93-C, no. 7, pp. 958-965, July 2010, doi: 10.1587/transele.E93.C.958.
Abstract: An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.958/_p

Copy

@ARTICLE{e93-c_7_958,
author={Ryo ISHIKAWA, Junichi KIMURA, Yukio TAKAHASHI, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit},
year={2010},
volume={E93-C},
number={7},
pages={958-965},
abstract={An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.},
keywords={},
doi={10.1587/transele.E93.C.958},
ISSN={1745-1353},
month={July},}

Copy

TY - JOUR
TI - Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 958
EP - 965
AU - Ryo ISHIKAWA
AU - Junichi KIMURA
AU - Yukio TAKAHASHI
AU - Kazuhiko HONJO
PY - 2010
DO - 10.1587/transele.E93.C.958
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
ER -