A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 µm CMOS ADC with Various Power and Area Minimized Circuit Techniques

Byeong-Woo KOO; Seung-Jae PARK; Gil-Cho AHN; Seung-Hoon LEE

doi:10.1587/transele.E94.C.1282

A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 µm CMOS ADC with Various Power and Area Minimized Circuit Techniques

Byeong-Woo KOO, Seung-Jae PARK, Gil-Cho AHN, Seung-Hoon LEE

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This work describes a 12-bit 100 MS/s 0.13 µm CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13 µm CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5 dB and 71.2 dB at 100 MS/s, respectively. The ADC with an active die area of 0.92 mm² consumes 19 mW at 100 MS/s from a 1.0 V supply. The measured FOM is 0.22 pJ/conversion-step.

Publication: IEICE TRANSACTIONS on Electronics Vol.E94-C No.8 pp.1282-1288

Publication Date: 2011/08/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E94.C.1282

Type of Manuscript: PAPER

Category: Electronic Circuits

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Byeong-Woo KOO, Seung-Jae PARK, Gil-Cho AHN, Seung-Hoon LEE, "A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 µm CMOS ADC with Various Power and Area Minimized Circuit Techniques" in IEICE TRANSACTIONS on Electronics, vol. E94-C, no. 8, pp. 1282-1288, August 2011, doi: 10.1587/transele.E94.C.1282.
Abstract: This work describes a 12-bit 100 MS/s 0.13 µm CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13 µm CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5 dB and 71.2 dB at 100 MS/s, respectively. The ADC with an active die area of 0.92 mm² consumes 19 mW at 100 MS/s from a 1.0 V supply. The measured FOM is 0.22 pJ/conversion-step.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1282/_p

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@ARTICLE{e94-c_8_1282,
author={Byeong-Woo KOO, Seung-Jae PARK, Gil-Cho AHN, Seung-Hoon LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 µm CMOS ADC with Various Power and Area Minimized Circuit Techniques},
year={2011},
volume={E94-C},
number={8},
pages={1282-1288},
abstract={This work describes a 12-bit 100 MS/s 0.13 µm CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13 µm CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5 dB and 71.2 dB at 100 MS/s, respectively. The ADC with an active die area of 0.92 mm² consumes 19 mW at 100 MS/s from a 1.0 V supply. The measured FOM is 0.22 pJ/conversion-step.},
keywords={},
doi={10.1587/transele.E94.C.1282},
ISSN={1745-1353},
month={August},}

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TY - JOUR
TI - A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 µm CMOS ADC with Various Power and Area Minimized Circuit Techniques
T2 - IEICE TRANSACTIONS on Electronics
SP - 1282
EP - 1288
AU - Byeong-Woo KOO
AU - Seung-Jae PARK
AU - Gil-Cho AHN
AU - Seung-Hoon LEE
PY - 2011
DO - 10.1587/transele.E94.C.1282
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2011
AB - This work describes a 12-bit 100 MS/s 0.13 µm CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13 µm CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5 dB and 71.2 dB at 100 MS/s, respectively. The ADC with an active die area of 0.92 mm² consumes 19 mW at 100 MS/s from a 1.0 V supply. The measured FOM is 0.22 pJ/conversion-step.
ER -