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An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs
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This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6 cm2/Vs and a current on/off ratio exceeding 108 were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532 nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.11 pp.1733-1738
- Publication Date
- 2011/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.1733
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
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Kiyoshi MORIMOTO, Nobuyasu SUZUKI, Kazuhiko YAMANAKA, Masaaki YURI, Janet MILLIEZ, Xinbing LIU, "An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 11, pp. 1733-1738, November 2011, doi: 10.1587/transele.E94.C.1733.
Abstract: This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6 cm2/Vs and a current on/off ratio exceeding 108 were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532 nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1733/_p
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@ARTICLE{e94-c_11_1733,
author={Kiyoshi MORIMOTO, Nobuyasu SUZUKI, Kazuhiko YAMANAKA, Masaaki YURI, Janet MILLIEZ, Xinbing LIU, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs},
year={2011},
volume={E94-C},
number={11},
pages={1733-1738},
abstract={This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6 cm2/Vs and a current on/off ratio exceeding 108 were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532 nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.},
keywords={},
doi={10.1587/transele.E94.C.1733},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1733
EP - 1738
AU - Kiyoshi MORIMOTO
AU - Nobuyasu SUZUKI
AU - Kazuhiko YAMANAKA
AU - Masaaki YURI
AU - Janet MILLIEZ
AU - Xinbing LIU
PY - 2011
DO - 10.1587/transele.E94.C.1733
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2011
AB - This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6 cm2/Vs and a current on/off ratio exceeding 108 were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532 nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.
ER -
English
