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Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress
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We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.11 pp.1739-1744
- Publication Date
- 2011/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.1739
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
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Shinya MORITA, Satoshi YASUNO, Aya MIKI, Toshihiro KUGIMIYA, "Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 11, pp. 1739-1744, November 2011, doi: 10.1587/transele.E94.C.1739.
Abstract: We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1739/_p
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@ARTICLE{e94-c_11_1739,
author={Shinya MORITA, Satoshi YASUNO, Aya MIKI, Toshihiro KUGIMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress},
year={2011},
volume={E94-C},
number={11},
pages={1739-1744},
abstract={We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.},
keywords={},
doi={10.1587/transele.E94.C.1739},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress
T2 - IEICE TRANSACTIONS on Electronics
SP - 1739
EP - 1744
AU - Shinya MORITA
AU - Satoshi YASUNO
AU - Aya MIKI
AU - Toshihiro KUGIMIYA
PY - 2011
DO - 10.1587/transele.E94.C.1739
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2011
AB - We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.
ER -
English
