IEICE TRANSACTIONS on Electronics
A Precision Floating-Gate Mismatch Measurement Technique for Analog Application
Summary :
For analog applications, the Metal-Insulator-Metal (MIM) capacitance has to be measured at a much higher resolution than using the conventional methods, i.e. to a sub-femto level. A new robust mismatch measurement technique is proposed, which is more accurate and robust compared to the conventional Floating Gate Capacitance Measurement (FGCM) methods. A capacitance mismatching measurement methodology based on Vs is more stable than that based on Vf because the influence of pre-existing charge in the floating-gate can be cancelled in the slope of ΔVs/ΔVf based on Vs. The accuracy of this method is evaluated through silicon measurement in a 0.13 µm technology. It shows that, compared to the ideal value, the average of the new method are within 0.12% compared to 49.23% in conventional method while the standard deviation is within 0.15%.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.780-785
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.780
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Won-Young JUNG, Jong-Min KIM, Jin-Soo KIM, Taek-Soo KIM, "A Precision Floating-Gate Mismatch Measurement Technique for Analog Application" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 780-785, May 2011, doi: 10.1587/transele.E94.C.780.
Abstract: For analog applications, the Metal-Insulator-Metal (MIM) capacitance has to be measured at a much higher resolution than using the conventional methods, i.e. to a sub-femto level. A new robust mismatch measurement technique is proposed, which is more accurate and robust compared to the conventional Floating Gate Capacitance Measurement (FGCM) methods. A capacitance mismatching measurement methodology based on Vs is more stable than that based on Vf because the influence of pre-existing charge in the floating-gate can be cancelled in the slope of ΔVs/ΔVf based on Vs. The accuracy of this method is evaluated through silicon measurement in a 0.13 µm technology. It shows that, compared to the ideal value, the average of the new method are within 0.12% compared to 49.23% in conventional method while the standard deviation is within 0.15%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.780/_p
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@ARTICLE{e94-c_5_780,
author={Won-Young JUNG, Jong-Min KIM, Jin-Soo KIM, Taek-Soo KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Precision Floating-Gate Mismatch Measurement Technique for Analog Application},
year={2011},
volume={E94-C},
number={5},
pages={780-785},
abstract={For analog applications, the Metal-Insulator-Metal (MIM) capacitance has to be measured at a much higher resolution than using the conventional methods, i.e. to a sub-femto level. A new robust mismatch measurement technique is proposed, which is more accurate and robust compared to the conventional Floating Gate Capacitance Measurement (FGCM) methods. A capacitance mismatching measurement methodology based on Vs is more stable than that based on Vf because the influence of pre-existing charge in the floating-gate can be cancelled in the slope of ΔVs/ΔVf based on Vs. The accuracy of this method is evaluated through silicon measurement in a 0.13 µm technology. It shows that, compared to the ideal value, the average of the new method are within 0.12% compared to 49.23% in conventional method while the standard deviation is within 0.15%.},
keywords={},
doi={10.1587/transele.E94.C.780},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - A Precision Floating-Gate Mismatch Measurement Technique for Analog Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 780
EP - 785
AU - Won-Young JUNG
AU - Jong-Min KIM
AU - Jin-Soo KIM
AU - Taek-Soo KIM
PY - 2011
DO - 10.1587/transele.E94.C.780
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - For analog applications, the Metal-Insulator-Metal (MIM) capacitance has to be measured at a much higher resolution than using the conventional methods, i.e. to a sub-femto level. A new robust mismatch measurement technique is proposed, which is more accurate and robust compared to the conventional Floating Gate Capacitance Measurement (FGCM) methods. A capacitance mismatching measurement methodology based on Vs is more stable than that based on Vf because the influence of pre-existing charge in the floating-gate can be cancelled in the slope of ΔVs/ΔVf based on Vs. The accuracy of this method is evaluated through silicon measurement in a 0.13 µm technology. It shows that, compared to the ideal value, the average of the new method are within 0.12% compared to 49.23% in conventional method while the standard deviation is within 0.15%.
ER -
English
