A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills

Sungjin KIM; Hyunchul KIM; Dong-Hyun KIM; Sanggeun JEON; Yeocho YOON; Jae-Sung RIEH

doi:10.1587/transele.E94.C.807

A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills

Sungjin KIM, Hyunchul KIM, Dong-Hyun KIM, Sanggeun JEON, Yeocho YOON, Jae-Sung RIEH

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In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 µm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency f_T. The measured gain was 18.6 dB with V_DD = 1.2 V and increased up to 20.2 dB with V_DD = 1.8 V at 66 GHz. The measured NF showed a minimum value of 7.0 dB at 62 GHz. DC power consumption was 24 mW with V_DD = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm 0.69 mm. This work was further extended to investigate the effect of dummy fills on LNA performance. An identical LNA, except for the dummy fills formed very close to (and under) the metal lines of spiral inductors and interconnects, was also fabricated and compared with the standard LNA. A peak gain degradation of 3.6 dB and average NF degradation of 1.3 dB were observed, which can be ascribed to the increased mismatch and line loss due to the dummy fills.

Publication: IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.807-813

Publication Date: 2011/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E94.C.807

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Sungjin KIM, Hyunchul KIM, Dong-Hyun KIM, Sanggeun JEON, Yeocho YOON, Jae-Sung RIEH, "A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills" in IEICE TRANSACTIONS on Electronics, vol. E94-C, no. 5, pp. 807-813, May 2011, doi: 10.1587/transele.E94.C.807.
Abstract: In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 µm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency f_T. The measured gain was 18.6 dB with V_DD = 1.2 V and increased up to 20.2 dB with V_DD = 1.8 V at 66 GHz. The measured NF showed a minimum value of 7.0 dB at 62 GHz. DC power consumption was 24 mW with V_DD = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm 0.69 mm. This work was further extended to investigate the effect of dummy fills on LNA performance. An identical LNA, except for the dummy fills formed very close to (and under) the metal lines of spiral inductors and interconnects, was also fabricated and compared with the standard LNA. A peak gain degradation of 3.6 dB and average NF degradation of 1.3 dB were observed, which can be ascribed to the increased mismatch and line loss due to the dummy fills.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.807/_p

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@ARTICLE{e94-c_5_807,
author={Sungjin KIM, Hyunchul KIM, Dong-Hyun KIM, Sanggeun JEON, Yeocho YOON, Jae-Sung RIEH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills},
year={2011},
volume={E94-C},
number={5},
pages={807-813},
abstract={In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 µm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency f_T. The measured gain was 18.6 dB with V_DD = 1.2 V and increased up to 20.2 dB with V_DD = 1.8 V at 66 GHz. The measured NF showed a minimum value of 7.0 dB at 62 GHz. DC power consumption was 24 mW with V_DD = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm 0.69 mm. This work was further extended to investigate the effect of dummy fills on LNA performance. An identical LNA, except for the dummy fills formed very close to (and under) the metal lines of spiral inductors and interconnects, was also fabricated and compared with the standard LNA. A peak gain degradation of 3.6 dB and average NF degradation of 1.3 dB were observed, which can be ascribed to the increased mismatch and line loss due to the dummy fills.},
keywords={},
doi={10.1587/transele.E94.C.807},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills
T2 - IEICE TRANSACTIONS on Electronics
SP - 807
EP - 813
AU - Sungjin KIM
AU - Hyunchul KIM
AU - Dong-Hyun KIM
AU - Sanggeun JEON
AU - Yeocho YOON
AU - Jae-Sung RIEH
PY - 2011
DO - 10.1587/transele.E94.C.807
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 µm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency f_T. The measured gain was 18.6 dB with V_DD = 1.2 V and increased up to 20.2 dB with V_DD = 1.8 V at 66 GHz. The measured NF showed a minimum value of 7.0 dB at 62 GHz. DC power consumption was 24 mW with V_DD = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm 0.69 mm. This work was further extended to investigate the effect of dummy fills on LNA performance. An identical LNA, except for the dummy fills formed very close to (and under) the metal lines of spiral inductors and interconnects, was also fabricated and compared with the standard LNA. A peak gain degradation of 3.6 dB and average NF degradation of 1.3 dB were observed, which can be ascribed to the increased mismatch and line loss due to the dummy fills.
ER -